In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 12, No. 5 ( 1994-09-01), p. 3027-3030
Abstract:
The damage behavior of Si induced by MeV Ge+ under tilted angle has been studied. In order to investigate the effect of implanted energy and angle on the damage distribution, the energies were varied from 1 to 2 MeV and the angles were varied from 7° to 60°. The experimental damage distribution is extracted based on the procedure by Feldman and Rodgers [L. E. Feldman and J. W. Rodgers, J. Appl. Phys. 41, 3776 (1970)] using the multiple-scattering model. The experimental data obtained are compared with the TRIM’90 code. The results show that the lateral damage spread can not be neglected; the shape and the depth o f damage distribution are well described by the TRIM’90 code under tilted angle irradiation for Si(100).
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1994
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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