In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 31, No. S1 ( 1992-01-01), p. 23-
Abstract:
The temperature change in GaSb melt caused by introducing ultrasonic vibrations of 10 kHz was measured to investigate why In x Ga 1- x Sb single crystals were grown under vibrations. The vibrations reduced the temperature difference near the melt surface across the radial direction, but they did not influence the temperature difference along the melt depth. The stirring of the melt by vibrations brought about the decrease of constitutional supercooling, and as a result the growth of In x Ga 1- x Sb single crystals was promoted.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAPS.31S1.23
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1992
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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