In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 10R ( 1993-10-01), p. 4418-
Abstract:
The surface of 100 keV Se + -implanted GaAs was encapsulated with As-doped a-Si:H with a thickness of about 80 nm. The sheet carrier concentration in thermally annealed samples increased with an increase in the concentration of As atoms in the a-Si:H encapsulant. A high sheet carrier concentration of 0.65×10 14 cm -2 can be achieved on GaAs which was implanted with a dose of 3.3×10 14 cm -2 and annealed at 1000°C for 15 min after encapsulation with an As-doped a-Si:H film. Furthermore, the diffusion rate of the implanted Se atoms was reduced with an increase in the concentration of As atoms in the encapsulant.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.4418
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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