In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 298 ( 1993)
Abstract:
We have studied the growth of microcrystalline silicon (μc-Si) and amorphous silicon (a-Si:H) by layer by layer deposition technique, where the deposition and the radical exposure are done alternatively. He or hydrogen plasma exposure gives rise to the etching effect of both μc-Si and a-Si:H even though the etch rate by He plasma is much smaller. The long exposure of hydrogen radical on a-Si:H gives rise to the formation of μc-Si at low substrate temperature (T s ), whereas the hydrogen content decreases at high T s . The growth mechanism of the crystallite is proposed on the basis of experimental results.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-298-163
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1993
detail.hit.zdb_id:
605289-7
detail.hit.zdb_id:
2451008-7
Permalink