In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 43, No. 5 ( 1994), p. 785-
Abstract:
The deep levels of n-Si/n+一Si interface and near the interface in the n-Si have been studies using spread resistance probe (SRP) and deep level transient spectroscopy (DLTS) techniques in silicon direct bonding. The experimental results show that a dominant electron trap, having energy level position of Ec-0.39eV and concentration in the range of l013-1014cm-3, was observed. This trap is strongly related to vacancies of n-Si/n+-Si interface and near the interface in the n-Si induced by high temperature(1000一11000C) treatment in SDB processing.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
1994
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