In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 1A ( 1991-01-01), p. L11-
Abstract:
This paper presents a new explanation of the orientation effect of self-aligned WSix gate GaAs MESFET's by taking the different channel-substrate interfaces formed in the [011] and [011̄] directions due to the piezoelectric charges in GaAs MESFET's into account. The predicted results are in agreement with the measurement data.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1991
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink