In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 41, No. 8 ( 1992), p. 1308-
Kurzfassung:
In this paper, we report the results of the growth of a series of ZnSe films on (100) GaAs at different substrate temperatures by hot wall epitaxy. The quality of ZnSe films has been studied by X-ray diffraction, Raman scattering and photoluminescence. The results show that: 1) We have got (100)-oriented single crystal fillms, but the quality becomes worse when lowering the substrate temperature. When the substrate temperature is below 300℃ there appears the (111)-oriented twins in the (100ZnSe. 2) When the substrate temperature is 350℃, Ga atom diffusion from the substrate to the ZnSe epitaxial layer is serious.
Materialart:
Online-Ressource
ISSN:
1000-3290
,
1000-3290
Sprache:
Unbekannt
Verlag:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publikationsdatum:
1992
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