In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 3B ( 1993-03-01), p. L428-
Abstract:
Metalorganic vapor phase epitaxy of ZnSe on a GaAs substrate was carried out using a novel organic selenium source, tertiarybutylselenol (t-BuSeH), for the first time. A constant and high growth rate was attainable in the growth temperature range of 280-500°C using t-BuSeH. The low-temperature reaction between diethylzinc and t-BuSeH was virtually eliminated, therefore growth uniformity and reproducibility were satisfactory. The grown ZnSe layers were evaluated to be of high quality by photoluminescence and X-ray diffraction measurement.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.L428
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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