In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 10A ( 1991-10-01), p. L1753-
Abstract:
A silicon dioxide film was etched by synchrotron radiation (SR) irradiation at a substrate temperature of about 500°C. The obtained etching rate was 13 nm/h and the activation energy approximately 1.2 eV. This process was applied to remove surface contaminants on a silicon surface. Oxygen and carbon contaminants in the SR-irradiated area decreased by about 1/3 and 1/10, respectively, indicating that SR irradiation is effective for surface cleaning. A sharp peak in Raman spectrum appeared when a silicon film was deposited after SR irradiation. Thus, the pre-irradiation by SR improves the crystal quality of the deposited film.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.30.L1753
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1991
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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