In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 2B ( 1991-02-01), p. L243-
Abstract:
Both voltage- and photoinjected DLTS study of the Staebler-Wronski effect in a-Si:H using isothermal high-speed capacitance-time ( C-t ) measurements (10 -3 ∼10 s) were done to elucidate the processes of defect creation and annealing. It was found that the densities of hole traps at E v +0.6 eV and electron traps at E c -0.4 eV were decreased by light soaking, accompanied by a simultaneous increase of electron traps at E c -0.9 eV and hole traps at E v +0.8 eV due to the dangling bonds. This fact suggests that the shallower traps may relate to the weak bonds, which convert to the metastable dangling bonds by light soaking.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.30.L243
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1991
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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