In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 6A ( 1993-06-01), p. L758-
Abstract:
We have developed a novel catalyst to selectively reduce the amount of residual SiH 4 and H 2 S as well as H 2 O in AsH 3 and PH 3 gases. The effectiveness of the point-of-use purifier in growing high-purity GaAs and InP by metalorganic vapor phase epitaxy (MOVPE) is presented. It is demonstrated that undoped InP with total carrier concentration as low as 1.0×10 14 cm -3 and mobility over 200,000 cm 2 /V·s at 77 K can be obtained reproducibly, using purified PH 3 which was intentionally doped with 740 ppb H 2 S. High-resistivity p-type GaAs was reproducibly obtained through purification of AsH 3 which was intentionally doped with 15 ppb SiH 4 . PL intensity of Al 0.25 Ga 0.75 As at 77 K was increased twofold as a result of point-of-use purification.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.L758
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
2006801-3
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