In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 235 ( 1991)
Abstract:
The effect of channeling on the diffusion of ion implanted phosphorus in silicon has been investigated. Silicon samples, implanted with 25–100 keV P along the [100] channeling and the random equivalent directions, were subjected to thermal annealing over a temperature range of 600–1050 °C. Secondary Ion Mass Spectrometry (SIMS) and Spreading Resistance Probe (SRP) have been used to determine the atomic and carrier concentration depth profiles, respectively. The findings show that after annealing, the P profiles by implantation along the random equivalent direction can be kept shallower than the profiles obtained by implantation along the [100] channeling direction. Through proper annealing and electrical activation, only minimal diffusion in the tail region of the profiles occurred. For 50 keV P at 1×10 15 at./cm 2 , changing the implantation from the [100] to the random equivalent direction leads to a reduction in the profile depth of about 50% (at 1×10 17 at./cm 3 ). After 10 seconds of rapid thermal annealing (RTA) at 1050 °C, the profile depth remains more than 30% shallower than the channeled profile.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-235-211
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1991
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