In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 7A ( 1994-07-01), p. L916-
Abstract:
Repeated rapid thermal N 2 O annealing is proposed as a new gate oxide preparation method for n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFET's). It is found that the n-MOSFET's with gate oxide prepared by this method exhibit higher field-effect mobility and better radiation hardness when compared with those with fresh and the conventional one-time N 2 O-annealed gate oxides.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.L916
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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