In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 5R ( 1994-05-01), p. 2457-
Abstract:
Unintentionally doped GaAs layers were grown on semi-insulating GaAs substrates by metal-organic chemical vapor deposition. Temperature-dependent electrical transport measurements were performed and the layer characteristics were derived by a two-layer analysis. The substrate begins to affect the layer transport properties at low temperatures, depending on the carrier density and the layer thickness. The p-type samples show two conductivity-type conversions at two different temperatures. One is a combined transport phenomenon of the layer and substrate, and the other occurs in the layer but is still influenced by the substrate. A two-band model involving light- and heavy-hole bands was adopted in analyzing the hole transport in the layer, and the light hole was determined to play a crucial role even with its very small effective mass compared to the heavy hole.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.2457
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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