In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 12, No. 1 ( 1994-01-01), p. 69-72
Abstract:
It is proposed that the plasma enhanced chemical vapor deposited tungsten nitride (PECVD-W–N) thin film is used as a diffusion barrier to prevent the interdiffusion between Al and Si during postannealing process. The atomic concentration of N in W–N film deposited with NH3/WF6 partial pressure ratio of 0.5 is about 33 at. % and its resistivity is 90–110 μΩ cm. The Rutherford backscattering spectrometry, Auger electron depth profiles, x-ray diffraction, and scanning electron micrographs show that 900 Å PECVD-W67N33 film interposed between Al and Si is more impermeable than PECVD-W film due to N atoms and it also keeps its chemical integrity during the postfurnace annealing at 600 °C for 30 min in Ar ambient.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1994
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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