In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 31, No. 8B ( 1992-08-01), p. L1164-
Abstract:
Oxide resistances, R ox 's determined by the recently reported charge-then-decay method are used to predict the hot-carrier and radiation hardnesses of metal-oxide-semiconductor (MOS) capacitors. The measurement of R ox is nondestructive to tested samples. It is found that a sample with a large R ox sustains a high gate voltage during constant current stressing. After stressing, the generated interface trap state is large for this sample. Also, it is found that the radiation damage of an MOS capacitor is dependent on its R ox . Samples with larger R ox exhibit more radiation hardness than those with smaller R ox after Co-60 irradiations. Strained-bond-induced micropores are possible origins for these observations.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.31.L1164
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1992
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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