In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 29, No. 8R ( 1990-08-01), p. 1523-
Abstract:
We have investigated the substrate temperature dependence of deposition rates for Ga, Al and As layers formed on fused quartz (Suprasil) substrates by ArF excimer laser-assisted chemical vapor deposition using trimethylgallium, trimethylaluminum and arsine as source materials, respectively. The deposition rates for Ga and Al were independent of substrate temperature in the range from 100°C to 400°C, and then increased with substrate temperature above 400°C. On the other hand, the As deposition rate decreased dramatically with increasing substrate temperature up to 300°C. The result of As deposition can be explained qualitatively by three competing processes of the laser decomposition of arsine and laser and/or thermal desorptions of the As atom.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.29.1523
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1990
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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