In:
Applied Physics Letters, AIP Publishing, Vol. 56, No. 20 ( 1990-05-14), p. 1942-1944
Abstract:
We have fabricated a front-surface-emitting laser diode (FSELD) using a technique which relies on a double ion implant of oxygen and beryllium. The laser had a low operating voltage at the lasing threshold, a low series resistance, and a relatively small threshold current of 6 mA for a 25-μm-diam device. The lasing wavelength was 971 nm and the spectral width above threshold was 5 Å. Since the light comes from the front surface of the wafer, the fabrication technique described here for realizing a FSELD can be used for the fabrication of vertical-cavity visible surface-emitting lasers.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1990
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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