In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 358 ( 1994)
Abstract:
We report a new method for synthesizing Ge nano-crystallites embedded in SiN y film matrices. On the basis of the effect of the reactant precursors and preferential chemical bonding of Si-N and Ge-Ge, thin films with Ge clusters embedded in SiN y matrices have been prepared in the PECVD system with reactant gases of SiH 4 , GeH 4 and NH 3 mixed in the hydrogen plasma. The as-deposited films were then crystallized by Ar ion laser annealing or thermal annealing technique to form nanometer-sized Ge crystallites. The composition and microstructures of these new type of sample were characterized by infrared absorption spectra, transmission electron microscopy, X-ray diffraction and Raman scattering spectra. The results indicated that the average size of Ge crystallites was estimated to be 2-20 nm depending on the deposition and annealing parameters and can be controlled by a designed manner.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-358-111
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1994
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