In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 9R ( 1994-09-01), p. 4880-
Abstract:
The X-band mixing performance of some step-edge junctions using Y 1 Ba 2 Cu 3 O 7- x films has been evaluated. The mixing conversion efficiency (η) depends predominantly on normal resistance ( R n ) of a junction, which determines impedance matching for the microstrip signal line. Under constant impedance conditions obtained from temperature dependence of R n , conversion efficiency (η) increases with increase of the I c R n product. In the range of 12 GHz, however, the efficiency is saturated above the I c R n product of 1 mV. This tendency agrees with our simulation based on the resistively shunted junction (RSJ) model.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.4880
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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