In:
Journal of Applied Physics, AIP Publishing, Vol. 70, No. 2 ( 1991-07-15), p. 661-664
Abstract:
Deep levels and electrical properties in Si- and Be-coimplanted semi-insulating GaAs, grown by liquid-encapsulated Czochralski methods, were investigated. The Si implantation with a dose of 8×1012 ions cm−2 and energy of 65 keV was performed into GaAs already implanted with a Be dose of 2×1012 cm−2 and 90 keV for the purpose of an abrupt implant profile in a deeper region. During the Be coimplantation, an electron deep level at 0.62 eV below the conduction band and a hole deep level at 0.68 eV above the valence band were newly observed. In the Be-implanted region of ion-implanted GaAs, the deep levels Ec − 0.62 eV and Ev + 0.68 eV dominate, but are not found in the bulk. From this work, it is suggested that the Ec − 0.62 eV trap could be the defect due to the implantation damage and that the Ev + 0.68 eV trap could be the Be complex related to a Si dose during the implantation.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1991
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
Permalink