In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 6R ( 1993-06-01), p. 2854-
Abstract:
Silicon-on-insulator (SOI) was fabricated by wafer bonding using thermal SiO 2 and trichloroethylene (TCE)-grown SiO 2 as the buried oxides. Both the fixed charge density and the interface trap density at the back of silicon films on oxides were found to be appreciably lower for TCE-grown SiO 2 than for dry-grown SiO 2 . The addition of TCE resulted also in significant increases of carrier lifetimes. The bonded SOI strength using TCE-grown SiO 2 is comparable to that using dry-grown SiO 2 .
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.2854
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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