In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 5R ( 1994-05-01), p. 2448-
Abstract:
Using contactless photoreflectance at 300 K we have characterized two InAlAs/InGaAs heterojunction bipolar transistor structures grown by molecular beam epitaxy. The spectra from the InAlAs and InGaAs interface can be accounted for on the basis of a triangular potential well which confined two-dimensional electron gas. A detailed lineshape fit makes it possible to evaluate the Fermi energy, and hence the two-dimensional electron gas concentration. Furthermore, other important parameters of the system, such as built-in electric fields and In composition, can be evaluated.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.2448
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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