In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 8A ( 1994-08-01), p. L1052-
Abstract:
The low-temperature (LT) epitaxial growth of high quality GaAs films is achieved by using triethylgallium and tertiarybutylarsine as the precursors. Without any external work, the deposition can be conducted at a temperature as low as 350° C in a conventional metalorganic chemical vapor deposition system. The full width at half-maximum of 77 K photoluminescence and X-ray rocking curve for a sample grown at 425° C are 8.2 meV and 14 arcsec, respectively. Materials with good electrical properties were also obtained. A Schottky diode formed on the LT CaAs epilayer shows a barrier height of 0.83 eV, and a reverse saturation current of 1.1×10 -7 A/cm 2 , comparable to that of a normal GaAs Schottky diode.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.L1052
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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