In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 8B ( 1993-08-01), p. L1153-
Abstract:
Nitrogen doping into ZnSe was carried out by photoassisted metalorganic vapor-phase epitaxy using diethylzinc and dimethylselenium. Tertiarybutylamine (t-BNH 2 ) was used as a doping source. Photoluminescence, electrical properties of Schottky diodes, and electroluminescence from ZnSe:N/n-ZnSe:Ga diodes revealed acceptor incorporation and p-type behavior in the ZnSe:N layers. Low-temperature (350°C) growth and low irradiation intensity (45 mW/cm 2 ) were found to be desirable for effective doping. As an example, for the ZnSe:N layer with nitrogen concentration of 5×10 17 cm -3 revealed by secondary ion mass spectroscopy, net acceptor concentration was estimated to be 2×10 17 cm -3 from capacitance measurements of the Schottky diodes as a first approximation.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.L1153
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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