In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 9S ( 1993-09-01), p. 4141-
Abstract:
The photo sensitivity of sol-gel solution of PbZr x Ti 1- x O 3 (PZT) was studied. A coated film of the sol-gel solution on Pt/Ti/SiO 2 /Si substrates was exposed to an excimer laser and developed with water. The film was finally annealed at 700°C for 60 s by rapid thermal annealing (RTA). Ferroelectric perovskite phase was observed in the PZT thin films. The 130-nm-thick film showed P r of 11.2 µ C/cm 2 and E c of 93.8 kV/cm. From this process, half-micron patterns of PZT films were obtained.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.4141
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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