In:
Journal of Applied Physics, AIP Publishing, Vol. 69, No. 12 ( 1991-06-15), p. 8247-8252
Abstract:
The mechanism of degradation in thin gate oxides due to postoxidation processing steps has been investigated using charge to breakdown QBD as a diagnostic tool. The QBD degradation is also correlated with trap generation rate in thin gate oxide. Controlled annealing experiments show that the gate oxide degradation is not related to the diffusion of phosphorous or other mobile ion impurities from the polysilicon film into the gate oxide. The degradation is caused by stress build up in silicon dioxide film with high-temperature annealing, due to viscous shear flow of the gate oxide at polysilicon/silicon dioxide and silicon dioxide/silicon interfaces. In another experiment, where the thickness of polysilicon was taken as a parameter, it is shown that degradation has a direct correlation with the polysilicon thickness which may be related to the mechanical stress.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1991
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
Permalink