In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 10R ( 1994-10-01), p. 5870-
Abstract:
Experimental conditions to obtain heteroepitaxial (100) GaAs/InP structure were
studied using the selective liquid phase epitaxy (SLPE) technique. It was observed that maximum epitaxial layer overgrowth (ELO) can be obtained by aligning the growth
seed along the 75° off [011] direction. The ELO width decreased as the mask width
decreased, probably due to As depletion above the oxide mask, which could be partly compensated by convecting the melt. The ELO width was substantially increased by adding Si,
P or Se to the Ga growth melt. Se addition, in particular, prevented meltback of substrates during the growth of GaAs on InP, resulting in a continuous specular GaAs film.
Cross-sectional transmission electron microscopy (TEM) study of the layers revealed that propagation of the misfit dislocations at the GaAs/InP interface is effectively
suppressed by the presence of the SiO 2 mask, except for some dislocations that
propagate toward the top of the mask by bending at the mask edge.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.5870
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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