In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 29, No. 4A ( 1990-04-01), p. L544-
Abstract:
Epitaxial growth of Al film on the (NH 4 ) 2 S x -treated surface of (100) GaAs was investigated by means of reflection high-energy electron diffraction (RHEED). A single crystal of epitaxial (110) Al film was obtained on the treated surface with heat treatment at 300°C prior to Al deposition, while Al film became polycrystalline without heat treatment. The effect is explained in terms of the alignment of S atoms on GaAs. The (NH 4 ) 2 S x -treated surface seems to be useful in the wide range of GaAs processes.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.29.L544
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1990
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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