In:
Advanced Materials, Wiley, Vol. 4, No. 9 ( 1992-09), p. 576-579
Abstract:
Novel gallane‐amine adducts have been synthesized and tested as alternative sources for the epitaxial growth of GaAs and (AlGa)As thin layers by metal organic vapor phase epitaxy. These precursors solve the problem of unwanted incorporation of carbon that arises with standard metalorganic sources. A single‐crystal X‐ray diffraction study provides more detailed insight into the molecular geometries of gallane‐amine adducts.
Type of Medium:
Online Resource
ISSN:
0935-9648
,
1521-4095
DOI:
10.1002/adma.19920040911
Language:
English
Publisher:
Wiley
Publication Date:
1992
detail.hit.zdb_id:
1012489-5
detail.hit.zdb_id:
1474949-X
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