In:
Applied Physics Letters, AIP Publishing, Vol. 56, No. 17 ( 1990-04-23), p. 1685-1687
Abstract:
The kinetics of light-induced defect generation or the Staebler–Wronski effect (SWE) have been measured on device quality hydrogenated amorphous silicon (a-Si:H) films having hydrogen contents (CH) of ∼10–28 at. %. The films were deposited with direct current (dc) magnetron reactive sputtering. The low CH films have a density of defect states (DOS)∼7 to 10×1015 cm−3 which is three to five times higher than the high CH films. Under light exposure, the DOS for low CH films increases slower than that of the high CH or glow discharge produced films; in fact it is smaller after a few hours of light exposure. These measurements show that low CH dc magnetron reactively sputtered a-Si:H appears to be more stable material for sensitive applications such as solar cells.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1990
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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