In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 9A ( 1994-09-01), p. L1254-
Kurzfassung:
The reverse annealing of arsenic-implanted amorphous-silicon films has been observed. The dose dependence of this phenomenon is also investigated. For the specimens implanted with the dosage of 4×10 14 ion/cm 2 , the sheet resistances show an increase in the annealing temperature range from 700 to 850°C, which is attributed to the segregation of the activated dopants to the grain boundaries. This reverse annealing phenomenon is less prominent and the turnaround temperature is lower for the implantation dosage of 2×10 15 ion/cm 2 , which is attributed to the effects of dopant segregation which decreases with increasing implantation dosage. Consequently, this reverse annealing phenomenon was not observed for the case of dosage of 1×10 16 ion/cm 2 .
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.L1254
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1994
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
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