In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 4R ( 1994-04-01), p. 1798-
Abstract:
Poly-Si thin-film transistor (TFT) devices using solid-phase-crystallized and liquid-phase-deposited gate oxide are, for the first time, realized by low-temperature processes (LTP) ( 〈 625° C) for future LCDs and 3-D integrated circuits. The method of liquid-phase deposition of SiO 2 ( LPD-SiO 2 ) is described. The physical, chemical and electrical properties of the new dielectric layer are clarified. The TFT ( W / L =200 µ m/10 µ m) having an on-off current ratio of 10 6 at V D =5 V, a field-effect mobility of 15 cm 2 / V· s at V D =0.1 V, a threshold voltage of 5.6 V, and a subthreshold swing of 1.6 V/decade, exhibits sufficient performance for pixel transistors. The field-effect mobility is strongly dependent on channel length. Effective passivation of defects by plasma hydrogenation will be very essential to achieve higher performance.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.1798
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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