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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 2704-2712 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A rovibronic-state-to-rovibronic-state experiment has been performed on the reaction O(3P)+HCl(v=2,J=1,6,9)→OH(v',N')+Cl(2P). The O(3P) atoms are produced with a known energy by photolysis of NO2. The HCl(v=2,J) molecules are prepared by IR excitation of thermal HCl using an optical parametric oscillator. All energetically accessible OH rovibrational product levels are probed by laser-induced fluorescence for each prepared HCl rotational level. The OH(v'=0,N') rotational distribution shows a dip at N'=11, the depth of which decreases with increasing HCl rotational excitation. The available energy of reaction is partitioned so that 40% appears as OH vibration (V'), 32% as OH rotation (R'), and 28% as product translation (T'). This energy partitioning does not change with HCl rotation, in contrast to the general expectation for light atom transfer reactions of approximate conservation of internal angular momentum (R→R'). A substantial vibrational inversion is observed, in agreement with the vibrational adiabaticity (V→V') expected for such reactions.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5382-5384 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiH4 and GeH4 deposition of Si1−xGex layers by a rapid thermal process very low pressure chemical vapor deposition method has been studied in this paper. The Ge incorporation rate increases to a maximum value and then decreases as temperature increases. The growth rate of the SiGe alloy reaches its maximum value and then decreases as Ge composition increases. Ge incorporation also enhances the Si deposition rate in the Si1−xGex alloy. These results have been explained by increasing the hydrogen desorption rate at low temperatures and low value of x (the germanium concentration) and decreasing the adsorption probability of reactive hydrides at high temperature and high value of x.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 79-80 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a new kind of ordered structure in the GeSi sublayer of GeSi/Si superlattice. X-ray diffraction of GeSi/Si superlattice exhibits extraordinary peaks of 1/2(111), 3/2(111), (222) on (111) sample, and (200) on (100) sample. This shows that the germanium and silicon atoms in the GeSi sublayer are ordered due to the strain rather than randomly distributed in bulk GeSi alloy. Two coexisting models of order have been suggested for the (111) sample. The atoms in the ordered structure are aligned as Ge-Si-Ge-Si and Ge-Si-Si-Si along the (111) axis. The relative ratio of the two models has been calculated for the experimental result. The ordered structure may have significant effect on the band structure and optical properties.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 8205-8207 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 66 (1994), S. 3696-3701 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 50 (1990), S. 237-239 
    ISSN: 1432-0630
    Keywords: 68.55.+b
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An Fe film was grown on an Si(100) substrate by metalorganic chemical vapor deposition (MOCVD) using thermal decomposition of iron pentacarbonyl, Fe(CO)5. The X-ray diffraction and cross-sectional high resolution electron microscopy (HREM) show that the Fe deposited film is a single crystal Fe film on Si(100). Single crystal Fe/Si Schottky barrier diodes exhibit good rectification.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1617-4623
    Keywords: Saccharomyces cerevisiae ; UV damage ; Mating type ; Inducible repair
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract The prior UV irradiation of α haploid Saccharomyces cerevisiae with a UV dose of 25 J/m2 substantially increases the repairability of damage subsequently induced by a UV dose of 70 J/m2 given 1 h after the first irradiation. This enhancement of repair is seen at both the MATa and HMLα loci, which are, respectively, transcriptionally active and inactive in α haploid cells. The presence in the medium of the protein synthesis inhibitor, cycloheximide in the period between the two irradiations eliminated this effect. Enhanced repair still occurred if cycloheximide was present only after the final UV irradiation. This indicated that the first result is not due to cycloheximide merely blocking the synthesis of repair enzymes associated with a hypothetical rapid turnover of such molecules. The enhanced repairability is not the result of changes in chromatin accessibility without protein synthesis, merely caused by the repair of the damage induced by the prior irradiation. The data clearly show that a UV-inducible removal of pyrimidine dimers has occurred which involves the synthesis of new proteins. The genes known to possess inducible promoters, and which are involved in excision are RAD2, RAD7, RAD16 and RAD23. Studies with the rad7 and rad16 mutants which are defective in the ability to repair HMLα and proficient in the repair' of MATα showed that in rad7, preirradiation enhanced the repair at MATα, whereas in rad16 this increased repair of MATα was absent. The preirradiation did not modify the inability to repair HMLα in either strain. Thus RAD16 has a role in this inducible repair. Inducible repair is also absent in a rad2 strain which cannot repair MATα or HMLα after a single UV dose.
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