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  • 1
    Electronic Resource
    Electronic Resource
    Deposited silicon nitride with low electron trapping rates (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 381-386 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, nitrogen-rich silicon nitride plasma deposited under conditions minimizing Si—H bonding is shown to possess extremely low bulk electron trapping rates which are as low or lower than plasma-deposited oxides produced using He dilution. The bulk trap density, measured by avalanche injection decreases as the rf power is decreased. The total charge trapped within these silicon nitrides reaches a saturation value determined by high field detrapping in thick nitride films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354121
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  • 2
    Electronic Resource
    Electronic Resource
    Raising the Curie point in the iron-cobalt-(aluminum) system : 35th Annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5924-5926 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ternary alloy system Fe-Co-Al exhibits a little-noticed anomaly in that some alloys containing Al have higher Curie points than their undiluted counterparts. New results present the evolution of Curie point and saturation magnetization as a function of Al content, especially below 7 wt % (∼13.5 at. %) in the midrange of the Fe-Co composition field. Maxima of Tc in the range of 1000–1025 °C are found for Al contents of about 2–5 wt % (4–10 at. %) for alloy series with 30- , 40- , and 50-wt % Co (∼27- , 37- , and 47-at. % Co). These values are some 25–45 °C higher than the corresponding zero-Al alloys. Correlation of low-field thermal hysteresis and saturation-field thermomagnetic curves indicate first-order Curie point behavior at low-Al content, followed by classical second-order transitions at and above the Al content corresponding to Tc maxima. The former follow the α-bcc to the γ-fcc phase transition. For the latter class the α phase has been stabilized to higher temperatures with a relatively uncommon Curie point enhancement behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347817
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  • 3
    Electronic Resource
    Electronic Resource
    Superlattice excitons and optical absorption (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7369-7378 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A formalism based on the superlattice crystal coordinate representation, which is valid for arbitrary well and barrier widths, is developed and applied to the Wannier exciton problem. A simple model for the electron-hole Coulomb interaction within the independent subband approximation permits nonvariational calculation of exciton binding energies, oscillator strengths, and optical absorption of both bound and continuum exciton states. The effects of growth axis directed electric and magnetic fields are emphasized. Numerical results for GaAs/ Ga1−xAlxAs and In1−xGaxAs/GaAs exciton binding energies and oscillator strengths as functions of well width, barrier width, and electric and magnetic field strengths show excellent agreement with experiment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355005
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of a remote hydrogen plasma reactor with electron spin resonance (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2631-2634 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gas phase chemical reactions, of importance in the deposition of amorphous semiconductors, were studied in a remote hydrogen plasma reactor with electron spin resonance (ESR). The following reactant pairs (and their observed room-temperature rate coefficients) were characterized: (1) H+SiH4(2.4×1011 cm3 mole−1s−1), (2) D+SiH4 (2.1×1011 cm3 mole−1 s−1), and (3) H+C2H2 (1.2×1010 cm3 mole−1 s−1). The interpretation of these coefficients in terms of primary and secondary gas phase reactions is discussed, and the values are compared where possible with previously published data. In addition, the paramagnetic centers of the silicon-based film that is deposited in situ during the ESR measurement can now be microscopically identified in light of recent studies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348655
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  • 5
    Electronic Resource
    Electronic Resource
    Spatial profiling of electron traps in silicon nitride thin films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5212-5221 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method is described for determining the spatial profiles of electron traps in dielectric thin films. The method is an extension of avalanche injection and charge centroid measurements. By determining the change in the charge centroid and the injected charge after a sequential series of pulses, the densities of electron traps as a function of depth in both low-pressure-chemical vapor deposited (LPCVD) and plasma-enhanced-chemical vapor deposited (PECVD) silicon nitrides were determined. Contrary to previous assumptions of a uniform trap density in the nitride, both nitrides exhibit interface trap densities extending 10–15 nm into the film that is between 6 and 15 times larger than the bulk trap density of 0.5–2×1018 cm−3. The trap capture cross section was determined to be 6–10×10−13 cm2. The interface trap density of commercial LPCVD nitride deposited at higher temperature was higher than that found for PECVD nitride. The spatial resolution and limitations of the profiling technique, avalanche injection and charge trapping were modeled by numerically solving equations describing charge trapping, current continuity, and electric field. Important issues such as the effects of field, trap density and detrapping on the profiling analysis are examined both experimentally and through the use of simulation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347064
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  • 6
    Electronic Resource
    Electronic Resource
    Hydrogen passivation of nonradiative defects in InGaAs/AlxGa1−xAs quantum wells (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 740-748 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of diffusion of monatomic hydrogen and deuterium in InGaAs/AlGaAs quantum wells were studied using photoluminescence (PL) and secondary-ion-mass spectroscopy. The multiquantum-well structures were grown by molecular-beam epitaxy and hydrogenated with a remote plasma. A significant increase in 77 K PL integrated intensity of bound excitons was observed after hydrogenation. This is attributed to the passivation of nonradiative recombination centers within InGaAs/AlGaAs quantum wells. A series of studies demonstrating the increase in passivation efficiency with increasing Al concentration in the barriers, the stability of the hydrogenation upon annealing to temperatures of up to and above 450 °C, the ratio of the deuterium concentration for samples with different barrier thicknesses, and the comparison of strained versus relaxed quantum wells, all strongly suggest that the passivated nonradiative recombination centers are interface defects. The stability of this hydrogen passivation at temperatures commonly used in device processing is particularly promising for device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353331
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  • 7
    Electronic Resource
    Electronic Resource
    Erratum: "Intrinsic stress in hydrogenated amorphous silicon deposited with a remote hydrogen plasma'' [J. Appl. Phys. 71, 2628 (1992)] (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4727-4727 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354101
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  • 8
    Electronic Resource
    Electronic Resource
    Intrinsic stress in hydrogenated amorphous silicon deposited with a remote hydrogen plasma (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2628-2631 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In hydrogenated amorphous silicon it is demonstrated that the maximum compressive intrinsic stress correlates with the optimum electronic properties. Undoped films were deposited over a range of temperatures in a remote hydrogen plasma (RHP) reactor and, for comparison, in a rf glow discharge (GD) system. The dependence of the stress on deposition temperature is qualitatively identical for the two reactors. Quantitatively, both the maximum compressive stress and the optimized electronic properties (e.g., minimum defect density) are obtained at 400 °C for the RHP films and near 250 °C for the GD films. Additionally, it is demonstrated that the transition from amorphous to microcrystalline silicon, induced by high hydrogen dilution, is accompanied by a reduction in compressive stress. Formation of compressive stress during RHP growth is ascribed to the insertion of hydrogen into the rigid silicon network immediately beneath the growing surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351057
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  • 9
    Electronic Resource
    Electronic Resource
    Authors' reply (1994)
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 101 (1994), S. 0 
    Details
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-0528.1994.tb13212.x
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  • 10
    Electronic Resource
    Electronic Resource
    The effect on fetal arteriolar oxygen saturation resulting from giving oxygen to the mother measured by pulse oximetry (1993)
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 100 (1993), S. 0 
    Details
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Objective To determine if pulse oximetry could detect any changes in fetal arteriolar oxygen saturation resulting from maternal administration of oxygen.Design A prospective study comparing study comparing the fetal pulse oximetry reading before and after giving 27% and 100% oxygen to the mother. The data were collected using an experimental pulse oximeter and a sensor specifically adapted to cope with the problems of fetal pulse oximetry.Setting Labour ward, St. James's University Hospital, Leeds University, UK.Subjects Twelve fetuses presenting by the vertex in normal uncomplicated labour.Main outcome measures The change in fetal arteriolar oxygen saturation recorded by the pulse oximeter in response to oxygen administration to the mother.Results Twenty-seven percent oxygen increased the average fetal arteriolar oxygen saturation by 7.5%, the effect being reversed when the oxygen was withdrawn. One hundred percent oxygen increased fetal arteriolar oxygen saturation by 11% and when the oxygen was withdrawn oxygen saturation dropped by 10%. One hundred percent inspired maternal oxygen was more effective than 27%. The gradient of the fetal oxygen regression slope is steeper with 100% oxygen than 27% and it is steeper when oxygen is given compared to when it is withdrawn. This suggests that the fetus responds to the new placental oxygen gradient by accepting oxygen more rapidly than it gives it up. Using a quadratic regression model, it took 9 min for fetal oxygen saturation to reach its maximum value after giving the mother oxygen.Conclusion This study confirms that a pulse oximeter is able to measure an increase in fetal arteriolar oxygen saturation when oxygen is administered to the mother.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-0528.1993.tb15269.x
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