ISSN:
1057-9257
Keywords:
Tin(II) sulphide
;
Tin(IV) oxide
;
Photoconductor
;
Air annealing
;
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
The thermal decomposition of chemically deposited SnS thin films to SnO2 films by air annealing at temperatures up to 400°C is discussed. The conversion of a 0.7 μm thick SnS thin film to an SnO2 film involves the creation of non-stoichiometric SnS, SnS + SnS2 mixed phase and non-stoichiometric SnO2 (i.e. SnO2 — x), as concluded from X-ray diffraction patterns, optical transmission spectra and electrical characteristics. The SnO2 thin films obtained in this manner are photoconductive, with a lowest sheet resistance (in the dark) of about 105 Ω/□ and an activation energy (Ea) of 0.1 eV for the electrical conductivity observed for the SnS films annealed at 325°C. This was found as the onset temperature for conversion of the SnS + SnS2 phase to the non-stoichiometric SnO2 - x film. Elevation of the annealing temperature to 400°C results in an elevation of the sheet resistance to about 109 Ω/□ with the value of Ea at 1.3 eV, indicating an improvement in the degree of stoichiometry.
Additional Material:
5 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/amo.860010303
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