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  • Articles  (3)
  • 85.30  (2)
  • Analytical Chemistry and Spectroscopy  (1)
  • Electronic books.
  • 1990-1994  (3)
  • 1
    Electronic Resource
    Electronic Resource
    Studies on the high-frequency properties of 〈111〉, 〈110〉 and 〈100〉 oriented GaAs IMPATT diodes (1993)
    Springer
    Applied physics 56 (1993), S. 375-380 
    Details
    ISSN: 1432-0630
    Keywords: 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract High-frequency analysis has been carried out to predict the rf performance of 〈111〉, 〈110〉 and 〈100〉 oriented p + nn +, n + pp + (single drift region) and n + npp + (double drift region) GaAs IMPATT diodes for opertion at 35 and 60 GHz. The microwave performance is observed to be highly sensitive to crystal orientation in case of p + nn + and n + npp + diodes whereas orientation of the substrate has negligible effect on n + pp + avalanche diodes. The calculation shows that 〈111〉 oriented GaAs IMPATT diode would provide the largest magnitude of negative resistance and negative conductance for both SDR p + nn + and DDR n + npp + diodes which indicates that high microwave power with high conversion efficiency can be realised from these 〈111〉 oriented GaAs devices. This result can be explained from the experimental data of electron and hole ionization rates for different orientations in GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324358
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Computer simulation of the small-signal admittance and negative resistance of double avalanche region IMPATT diodes (1993)
    Springer
    Applied physics 56 (1993), S. 575-580 
    Details
    ISSN: 1432-0630
    Keywords: 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A generalized small-signal computer simulation of double avalanche region (DAR) n +-p-v-n-p + Si and InP IMPATT diodes has been carried out for different frequencies and current densities taking both drift and diffusion of charge carriers into account. The simulation results show that both symmetrically and asymmetrically doped devices based on Si and InP exhibit discrete negative conductance frequency bands separated by positive conductance frequency bands. The magnitudes of both negative conductance and negative resistance of InP devices are larger than those of Si devices in case of symmetrical and asymmetrical diodes. Further, the negative resistance profiles in the depletion layer of these diodes exhibit a single peak in the middle of the drift layer in contrast to double peaks in double drift region diodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331408
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    35Cl nuclear quadrupole resonance in 2,4- and 2,6-dichlorobenzyl alcohols (1992)
    Chichester : Wiley-Blackwell
    Organic Magnetic Resonance 30 (1992), S. 616-620 
    Details
    ISSN: 0749-1581
    Keywords: 35Cl NQR ; Temperature dependence ; Order-disorder transition ; Torsional frequency ; Laser Raman spectra ; Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: 35Cl nuclear quadrupole resonance (NQR) was studied in 2,4-dichlorobenzyl alcohol (2,4-DCBA) and 2,6-dichlorobenzyl alcohol (2,6-DCBA). The NQR spectrum of 2,4-DCBA show four lines and that of 2,6-DCBA two lines. The temperature dependence of the NQR frequencies from 77 K up to the respective melting points was studied. An order-disorder transition was observed in 2,6-DCBA around 215 K. Torsional frequencies and their temperature coefficients were calculated using the temperature dependence of the NQR frequencies, and were compared with the laser Raman spectra obtained at room temperature.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/mrc.1260300707
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    Paper (German National Licenses)
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