Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
57 (1990), S. 1348-1350
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A new hot-electron transistor for 10 μm infrared radiation detection is presented and discussed. The device utilizes an infrared sensitive GaAs/AlGaAs multiple quantum well structure as emitter, a wide quantum well as base, and a thick quantum barrier placed in front of the collector as an electron energy high pass filter. The energy filter selectively permits the higher energy photocurrent to pass to the collector; the lower energy dark current is rejected by the filter, and is drained through the base. The device detectivity, as noted by the collector photocurrent measurements, is much enhanced in comparison with companion infrared photoconductive devices.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.103480
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