Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
57 (1990), S. 472-474
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
The effect of room-temperature electron beam irradiation on the Al-Ga interdiffusion at GaAs/AlGaAs quantum well heterointerfaces is investigated with low-temperature cathodoluminescence spectroscopy. The interdiffusion is enhanced by defects generated through an irradiation with a 400 keV electron beam. After room-temperature irradiation with a dose of ∼1.5×1017–2.5×1017/cm2 and subsequent rapid thermal annealing at 900 °C for 1 min, an interdiffusion length of 3–5 A(ring) is obtained. The electron beam induced damage tends to saturate with increasing irradiation dose, and the formation of defect cluster at high dose limits the defect introduction and, thus, the interdiffusion at the interface.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.103669
Permalink
|
Standort |
Signatur |
Einschränkungen |
Verfügbarkeit |