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  • American Institute of Physics (AIP)  (3)
  • 1990-1994  (3)
Document type
Publisher
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Comment on "High-detectivity GaAs quantum-well infrared detectors with peak responsivity at 8.2 μm'' (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4129-4129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent measurements of less-than-full shot noise in GaAs/AlGaAs quantum-well infrared detectors can be explained in terms of standard photoconductor generation-recombination theory. Therefore, more complex models are not yet necessary.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348426
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Photoconductive gain and generation-recombination noise in multiple-quantum-well infrared detectors (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3589-3591 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoconductive gain, g, and generation-recombination (GR) noise of multiple-quantum-well infrared detectors are calculated for structures in which the well capture probability, pc, and the fraction of current derived from tunneling are allowed to vary through the structure. For uniform pc and no tunneling current, g=1/(Npc), where N is the number of wells. The GR noise power under the same conditions is 4eI¯gB(1−pc/2), where e is electronic charge, I¯ is the mean current, and B is the measurement bandwidth. When pc(very-much-less-than)1, the noise contributions from carrier generation and decay (recombination) are equal as in a homogeneous photoconductor. However, when pc→1, the recombination noise decreases to zero, and the noise is equal to the shot noise of N series-connected, independent junctions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110105
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Resistance and 1/f noise of Au, Al, and Ge contacts to (Hg,Cd)Te (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6340-6346 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The resistance and 1/f noise of Au and Al contacts to ion-sputtered p-type Hg0.79Cd0.21Te and of Ge contacts to Hg0.7Cd0.3Te have been measured at temperatures of 12, 40, 77, and 295 K. The Au and Al contacts were ohmic at all temperatures whereas the Ge contacts were partially rectifying. The specific contact resistance for Au and Al varied by about a factor of 10 up to 9×10−4 Ω cm2 and 3×10−3 Ω cm2, respectively, at 295 K, and there was little variation in resistance down to 12 K. The 1/f noise of the Au and Al contacts could be described as a power spectral density of resistance fluctuations SR which varied with the contact diameter d as SR∝d−m, where 5≤m≤6 for Au and 2≤m≤3 for Al. The values of m suggest that whereas the 1/f noise of the Au contacts originated at the Au/(Hg,Cd)Te interface or in the underlying (Hg,Cd)Te, the 1/f noise of the Al contacts originated in a surface conduction layer next to the contact. The magnitude of the 1/f noise was significantly larger than expected for any fundamental 1/f noise source.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345154
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    Paper (German National Licenses)
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