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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4363-4365 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This communication presents a comparative study of polish-induced effects in 〈100〉 GaAs by Raman spectroscopy (strain) and cross-sectional transmission electron microscopy (dislocation density). It is found that the depth and polish-time dependence of both the strain and dislocation density obey the same relationship. However, the skin depth evaluated by Raman scattering is a factor of 10 smaller than that determined from transmission electron microscopy.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2507-2509 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High resolution transmission electron microscopy and analytical electron microscopy show direct evidence for defect-free interfaces produced by in situ cluster deposition of Au, Ag, and Ti onto ultrahigh vacuum-cleaved n-GaAs. In contrast to interfaces produced by atom-by-atom deposition, no specific interface reconstruction or orientation relationship and no change of stoichiometry of the GaAs near the interface was observed. Schottky barrier heights correspond to unusual Fermi level pinning positions in the upper half of the GaAs band gap, in clear contrast to values obtained for atom deposition and for diodes prepared by standard technology on GaAs (100). These results give clear evidence that Fermi level pinning for metal/GaAs interfaces formed without defects does not follow the predictions of current metal-induced gap-state models.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1677-1679 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction between a GaAs cap and InAs islands grown on vicinal GaAs(001) has been studied by transmission electron microscopy and atomic force microscopy. Samples were prepared by molecular beam epitaxy at 480 °C. Upon GaAs cap deposition, it was found that the previously grown InAs islands undergo a novel type of morphological transition, i.e., a transition from disk-shaped to ring-shaped islands. InAs becomes depleted or entirely absent in the central area of what had been a disk-shaped InAs island. The GaAs cap was also shown to be virtually absent within the same central region, resulting in the formation of crater-like surface depressions.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structures and electronic properties of misfit dislocations in ZnSe/GaAs(001) heterojunctions have been studied by transmission electron microscopy, cathodoluminescence (CL), and photoluminescence. In undoped ZnSe epilayers, irregular dislocation segments tending to lie roughly along [100] and [010] directions were observed as well as long straight 60° dislocations along [110] and [11¯0] directions. In N-doped ([N](approximately-greater-than)1×1018 cm−3) ZnSe epilayers, the misfit dislocations were predominantly dissociated into partial dislocations which makes cross slip and formation of irregular dislocations more difficult; only the straight dislocations along [110] and [11¯0] were observed. The CL observations suggest that the irregular dislocations trap carriers more efficiently than the dislocations along 〈110〉.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3002-3004 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism responsible for the semi-insulating properties of low-temperature-grown GaAs is investigated by determining the concentration of arsenic antisite (AsGa)-related defects in the material. The concentrations of the defects in neutral and positively charged states, As0Ga and As+Ga, are determined by near-infrared absorption and magnetic circular dichroism of absorption, respectively. Materials grown and annealed at different temperatures are investigated. We find that the defects are abundant in all samples studied, with the concentration of As0Ga higher than that of As+Ga defects. The results indicate that the defects can account for the pinning of the Fermi energy and consequently also the semi-insulating properties of the material. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2995-2997 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Au/Te/Au contacts to n-type GaAs were prepared by sequential vapor deposition and subsequently annealed at temperatures in the range 420–480 °C. The structural and electrical characteristics of the contacts were characterized by transmission electron microscopy and current–voltage measurements. We found that the electrical behavior of the contacts depends dramatically on whether they are covered with an Al2O3 cap during annealing. While a cap-annealed Au/Te/Au contact remains rectifying, annealing without the cap results in ohmic behavior. In conjunction with the observed structural properties, this phenomenon can be understood in terms of the doping model for ohmic contact formation.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2435-2441 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Powdered samples of the type Ce1−xRExO2−y, where RE=La, Pr, Nd, Eu, Gd, and Tb, are synthesized over the range 0≤x≤0.5 starting from nitrate solutions of the rare earths. X-ray diffraction and Raman scattering are used to analyze the samples. These compounds, at least in the low doping regime and for strictly trivalent dopants, form solid solutions that maintain the fluorite structure of CeO2 with a change in lattice constant that is approximately proportional to the dopant ionic radius. The single allowed Raman mode, which occurs at 465 cm−1 in pure CeO2, is observed to shift to lower frequency with increasing doping level for all the rare earths. However, after correcting for the Grüneisen shift from the lattice expansion, the frequency shift is actually positive for all the strictly trivalent ions. In addition, the Raman line broadens and becomes asymmetric with a low frequency tail, and a new broad feature appears in the spectrum at ∼570 cm−1. These changes in the Raman spectrum are attributed to O vacancies, which are introduced into the lattice whenever a trivalent RE is substituted for Ce4+. This conclusion is supported by a simple model calculation of the effects of O vacancies on the Raman spectrum. The model uses a Green's function technique with the vacancies treated as point defects with zero mass.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 600-602 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown with correlated magnetic resonance and electrical measurements that the PIn antisite is the prevailing defect in InP grown by molecular-beam epitaxy at low temperature. The first ionization level of the PIn antisite is resonant with the conduction band, which makes the material n-type conducting due to autoionization of the PIn antisite.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4686-4694 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: FeSi2 precipitates were produced in Si(001) wafers by an ion-beam induced epitaxial crystallization process and subsequently annealed at temperatures in the range 650–900 °C. The resulting precipitate coarsening and phase transition were studied by transmission electron microscopy. The coarsening process basically involves the evolution of plate-shaped precipitates. The lengthening rate of the precipitates is considerably greater than the thickening rate, because the two broad faces of a plate are coherent or semicoherent, while the plate edges are incoherent. The lengthening kinetics was shown to be volume-diffusion controlled and obey a cube power law. The corresponding activation energy was determined to be 3.55 eV, in excellent agreement with the value predicted by the classical Ostwald ripening model. In contrast, we demonstrated that the thickening process is interface controlled, which involves the migration of the interfaces via a ledge mechanism. Accordingly, an apparent activation energy of 2.18 eV was obtained. The precipitate coarsening is accompanied by phase transitions. Upon annealing at 650 °C, it was observed that γ-FeSi2 precipitates tend to transform from a fully aligned (A-type) to a twinned (B-type) orientation with respect to the Si matrix. For higher temperature anneals, nearly all the precipitates transform from the γ phase into the β phase, except those having a relatively small diameter (〈≈5 nm) which remain as A-type γ-FeSi2. These observations suggest that the phase transition of FeSi2 is size dependent. This can be understood, in terms of the interfacial energy versus the volume free energy of a precipitate as a function of precipitate size.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7448-7455 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous zinc-phosphide films have been prepared by reactive rf sputtering of zinc in a PH3-containing argon atmosphere. Transmittance and reflectance measurements were used to calculate the refractive index n and the extinction coefficient k as functions of wavelength. The absorption coefficient α was calculated and an optical gap of 1.60 eV was deduced. The benchmark energy E04, where the absorption reaches 104 cm−1, is at 1.75 eV. The measurement of the dark conductivity yielded an activation energy around 0.7 eV, near optical midgap. The magnitude of the pre-exponential factor of the conductivity and the sign of the thermopower indicate that carrier transport is due to conduction in extended valence-band states. The photoconductivity is much higher than the dark conductivity at room temperature. A gain of 103 was obtained by illumination with 100 mW cm−2 white tungsten lamp radiation. From the temperature dependence of the photoconductivity, activation energies of 0.18 and 0.3 eV can be deduced.
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