In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 42, No. 7 ( 1993), p. 1121-
Kurzfassung:
GexSi1-x/Si strained-layer superlattices were grown on Si(lOO) substrates under different temperatures by molecular beam epitaxy. Methods such as reflection high energy electron diffraction, X-ray double crystal diffraction, Rutherford back scattering, transmission electron microscopy and Raman scattering have been applied to study the growth and characteristics of the GexSi1-x/Si superlattices. The result show that the optimum growth temperature are different for superlattices with different composition, the smaller the x the higher the growth temperature, and vice versa. For x = 0.1-0.6, the GexSi1-x/Si superlattices with flat interfaces, good crystal perfection and uniform periodicity can be obtained with growth temperature in the range of 400-600℃.
Materialart:
Online-Ressource
ISSN:
1000-3290
,
1000-3290
DOI:
10.7498/aps.42.1121-2
Sprache:
Unbekannt
Verlag:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publikationsdatum:
1993
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