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  • AIP Publishing  (40)
  • 1990-1994  (40)
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  • AIP Publishing  (40)
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  • 1990-1994  (40)
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Subjects(RVK)
  • 1
    Online Resource
    Online Resource
    AIP Publishing ; 1991
    In:  Applied Physics Letters Vol. 58, No. 9 ( 1991-03-04), p. 914-916
    In: Applied Physics Letters, AIP Publishing, Vol. 58, No. 9 ( 1991-03-04), p. 914-916
    Abstract: Infrared photoconductors fabricated with a CdTe/Hg0.64Cd0.36Te abrupt heterostructure grown on a GaAs substrate by molecular beam epitaxy are described here for the first time. The growth procedure, device fabrication, and measurement results are described. The results show that the devices have relatively high detectivity and uniformity. The observed enhancement in device performance attributed essentially to the large reduction in interface states and surface contamination by a subsequent growth of a lattice-matched semi-insulating CdTe epilayer for the passivation of HgCdTe surface.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1991
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 2
    Online Resource
    Online Resource
    AIP Publishing ; 1991
    In:  Journal of Applied Physics Vol. 69, No. 12 ( 1991-06-15), p. 8083-8091
    In: Journal of Applied Physics, AIP Publishing, Vol. 69, No. 12 ( 1991-06-15), p. 8083-8091
    Abstract: Thermal stress-induced voiding in narrow aluminum-based metallizations used as interconnects in microelectronic circuits has recently become a serious reliability concern. Room-temperature stress relaxation and associated physical phenomena in passivated and unpassivated aluminum-based metallizations, subsequent to exposure to high temperatures, are analyzed based both on theoretically estimated and experimentally determined thermal stresses. It is shown that stress relaxation at longer times involves mainly dislocation climb, while short-term relaxation during cool down from higher temperatures, and immediately thereafter, involves significant dislocation glide. Void growth, frequently observed in passivated metallizations, provides a new source of atoms to feed stress relaxation by the same processes as in the absence of voiding.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1991
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 3
    Online Resource
    Online Resource
    AIP Publishing ; 1992
    In:  Journal of Applied Physics Vol. 72, No. 10 ( 1992-11-15), p. 4634-4637
    In: Journal of Applied Physics, AIP Publishing, Vol. 72, No. 10 ( 1992-11-15), p. 4634-4637
    Abstract: Electron microscopy shows that textured Y-Ba-Cu-O superconductors contain many partial dislocations associated with stacking faults in a-b planes. Two types of partial dislocations parallel to the [100] and [010] direction have been identified with Burgers vectors [a/2, 0, c/6] and [0, −b/2, c/6] , respectively, which are the same as the displacement vectors of the associated stacking faults.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1992
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 4
    Online Resource
    Online Resource
    AIP Publishing ; 1994
    In:  The Journal of Chemical Physics Vol. 101, No. 4 ( 1994-08-15), p. 3412-3413
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 101, No. 4 ( 1994-08-15), p. 3412-3413
    Abstract: Using the same level of ab initio quantum chemical theory as that applied by Becker et al. [J. Chem. Phys. 100, 1759 (1994)], we have reexamined the structures of SF5 and SF+5. Contrary to their report, we find that the SF5/(D3h) and SF+5(C4v) structures are not local minima. The adiabatic ionization energies (IE) for SF4 and SF5, and the heats of formation at 0 K (ΔHf00) for SF4, SF+4, SF5, SF+5, and SF6 have also been calculated using the G2(MP2) procedure [Curtiss et al., J. Chem. Phys. 98, 1293 (1993)] . Excellent agreement is found between the theoretical G2(MP2) and accepted experimental IEs for SF4 and SF5. The theoretical ΔHf00’s for SF4, SF+4 and SF6 are also in excellent accord with the literature values. However, the G2(MP2) calculation indicates that the current recommended experimental ΔHf00(SF5) may be too low by about 10 kcal/mol.
    Type of Medium: Online Resource
    ISSN: 0021-9606 , 1089-7690
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1994
    detail.hit.zdb_id: 3113-6
    detail.hit.zdb_id: 1473050-9
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  • 5
    Online Resource
    Online Resource
    AIP Publishing ; 1994
    In:  Journal of Applied Physics Vol. 75, No. 10 ( 1994-05-15), p. 6504-6506
    In: Journal of Applied Physics, AIP Publishing, Vol. 75, No. 10 ( 1994-05-15), p. 6504-6506
    Abstract: The microstructure, anisotropic magnetoresistance, and magnetic properties of Ti/Ni81Fe19 thin films have been investigated with respect to annealing temperatures (TA) up to 450 °C as well as to anneal times (tA). It has been shown that 120 °C is the optimum annealing temperature and that tA has no significant influence on the properties with annealing at 270 °C. Auger depth profiling was used to study interdiffusion kinetics. The diffusivity D and activation energy ε have been estimated at about 2.0×10−17 cm2/s and 1.69 eV, respectively.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1994
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 6
    Online Resource
    Online Resource
    AIP Publishing ; 1991
    In:  Journal of Applied Physics Vol. 69, No. 3 ( 1991-02-01), p. 1748-1755
    In: Journal of Applied Physics, AIP Publishing, Vol. 69, No. 3 ( 1991-02-01), p. 1748-1755
    Abstract: In the present study, the Eshelby theory of inclusions is applied to model the stresses arising after heat treatment at 400 °C in aluminum line metallizations, embedded in silicon/passivation matrix. The stresses obtained are about 200 MPa higher than the ones previously reported. Moreover, the stresses in the axial and width directions of the lines are shown to be on the same order, while the normal stress is smaller, especially in the lines of low thickness-to-width ratio. A modification of the familiar sin2 ψ method of x-ray stress measurement is presented to deal more accurately with the [111]-fiber texture present in the aluminum lines studied. The lateral and normal stresses in the aluminum metallizations after a heat treatment at 400 °C are measured in room temperature by x-ray diffraction from 4 h after the heat treatment at 400 °C up to 3 months. The experimental results are well in accord with predictions obtained from the Eshelby model. Particularly, the lateral stresses are found to be about equal, while the initial normal stress is smaller, but eventually becomes the largest stress component. Dislocation mechanisms to rationalize the present observations are discussed: at longer times, diffusion-controlled dislocation climb and void growth connected to it appear to be the most important mechanisms to relieve the stress, while during cooling dislocation glide is also significant.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1991
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 7
    Online Resource
    Online Resource
    AIP Publishing ; 1994
    In:  Journal of Applied Physics Vol. 76, No. 5 ( 1994-09-01), p. 3041-3044
    In: Journal of Applied Physics, AIP Publishing, Vol. 76, No. 5 ( 1994-09-01), p. 3041-3044
    Abstract: We report on the observation of the quantum confinement effect by using photothermal deflection spectroscopy (PDS) experiment and the time dependence of optically induced degradation in CdS and CdSe semiconductor-doped glasses. The observed absorption peaks in the PDS experiment, together with a simple model, were used to evaluate the average radius of semiconductor microcrystals. It is found that the estimated average radii of quantum dots are consistent with that obtained from other methods. This result demonstrates that the PDS technique provides an alternative tool for the study of the optical properties of semiconductor microscrystals. The time dependence of the luminescence degradation of the impurity band, which is attributed to the process of Auger ionization, follows a stretched-exponential function. The inconsistency with the previously proposed exponential relaxation may be due to the size distribution of CdS and CdSe microcrystals.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1994
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 8
    In: Journal of Applied Physics, AIP Publishing, Vol. 75, No. 3 ( 1994-02-01), p. 1390-1395
    Abstract: Surface damage on highly oriented pyrolytic graphite induced by bombardment of 530 keV Au+ or 4.5 MeV Au++ at a low dose of 1×1012 cm−2 was studied by scanning tunneling microscopy. The most prominent surface features are hillocks with a diameter of about 1.8 nm. The average spatial density of the hillocks is in good agreement with the ion dose used, indicating that they are induced by impact of individual incident gold ions. There also exists another type of hillock (which is called bump in this paper) with a smaller diameter and a frequency of about twice the ion dose. These small hillocks have never been reported before and are likely to be caused by the outward sputtering of secondary particles as products of collision cascades. Beside the various √3×√3 R 30° superstructures of graphite, Friedel oscillations are very often seen surrounding most of the hillocks. The physical mechanism of the formation of both types of the hillocks is also discussed.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1994
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 9
    Online Resource
    Online Resource
    AIP Publishing ; 1993
    In:  Journal of Applied Physics Vol. 73, No. 11 ( 1993-06-01), p. 7581-7584
    In: Journal of Applied Physics, AIP Publishing, Vol. 73, No. 11 ( 1993-06-01), p. 7581-7584
    Abstract: Flux pinning energies and their distributions at 77 K in silver-sheathed and highly c-axis-oriented Bi2223 superconducting tape with a nominal composition of Bi1.8Pb0.4Sr2Ca2.2Cu3Oy have been determined by 90° rotating sample magnetic measurements. These measurements are done in three different configurations in which the relative orientations between the trapped flux and the depinning fields vary. Three peaks, located at 0.09–0.1 eV, 0.3–0.6 eV, and 1.4 eV, respectively, are found in the distribution curves. The relation between the peaks and pinning mechanisms as pinning of a single kink, kink formation, and intrinsic pinning is discussed.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1993
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 10
    Online Resource
    Online Resource
    AIP Publishing ; 1994
    In:  Journal of Applied Physics Vol. 76, No. 10 ( 1994-11-15), p. 6487-6489
    In: Journal of Applied Physics, AIP Publishing, Vol. 76, No. 10 ( 1994-11-15), p. 6487-6489
    Abstract: The magnetoresistance of FeAg granular films with optimum composition has been systematically studied as a function of film thickness. It was found that the giant magnetoresistance increases rapidly with increasing film thickness in the initial stage, and beyond about 500 Å the improvements become limited. The saturation field was also found to rise with increasing film thickness. Transmission electron microscope studies showed that with the increase of film thickness the microstructure becomes more homogeneous, with smaller grains and fewer structural defects such as twins. A discussion of the influence of microstructure on magnetoresistance and saturation field is presented.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1994
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
    Location Call Number Limitation Availability
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