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  • AIP Publishing  (11)
  • 1990-1994  (11)
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  • AIP Publishing  (11)
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  • 1990-1994  (11)
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  • 1
    Online Resource
    Online Resource
    AIP Publishing ; 1991
    In:  Journal of Applied Physics Vol. 70, No. 10 ( 1991-11-15), p. 6375-6375
    In: Journal of Applied Physics, AIP Publishing, Vol. 70, No. 10 ( 1991-11-15), p. 6375-6375
    Abstract: In a trial to develop heat-resistant sintered Nd2Fe14B magnets, a refractory element (Cr/W/Zr/Nb/Ta) was selected as an additive incorporating Dy and Co in the Nd-Fe-B composition. Nd13Dy1.5Fe72−xCo6B7.5Mx alloys (M=Cr/W/Nb/Ta, x=0, or 3.5) were arc-melted, pulverized, compacted, and sintered by the conventional powder metallurgy method. It was found that W/Cr greatly enhances the as-sintered intrinsic coercivity (iHc, in kA/m), e.g., from 510 (x=0) to 810 (W, x=3.5) or 740 (Cr, x=3.5). An additional two-stage annealing at 900 and 600 °C for 1 h each led to an even higher iHc of 1000 (W, x=3.5). While Nb/Ta moderately enhanced as-sintered iHc, and responded less to additional annealing. Temperature coefficients of remanence was found to be greatly improved by the W or Cr addition, e.g., 0.43%/°C for x=0 and 0.06%/°C for M=W, x=3.5 (p=1, 20–150 °C). They are thus very suitable for applications at temperatures up to 150 °C. EPMA analyses showed the possible existence of a M2FeB2 (M=W/Nb/Ta) phase at grain boundaries. Thermomagnetic analyses and detailed microstructure of the sintered and/or annealed magnets are discussed.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1991
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 2
    Online Resource
    Online Resource
    AIP Publishing ; 1993
    In:  Journal of Applied Physics Vol. 74, No. 3 ( 1993-08-01), p. 1781-1786
    In: Journal of Applied Physics, AIP Publishing, Vol. 74, No. 3 ( 1993-08-01), p. 1781-1786
    Abstract: p-n Ga0.65In0.35P homostructure light-emitting diodes grown on GaAs0.7P0.3 substrates have been fabricated by low-pressure metalorganic vapor-phase epitaxy. The growth and characterization of undoped, Si-, and Zn-doped layers are described in detail. The optimum growth condition to grow the high-quality Ga0.65In0.35P epitaxial layers is at the growth temperatures of 700–740 °C and V/III ratios of 100–200. The strongest photoluminescence peak intensity occurs at 2×1018 and 7×1017 cm−3 for electron and hole concentrations, respectively. Diodes fabricated from the p-n homostructure are characterized by current-voltage measurement, electroluminescence, and external quantum efficiency. A forward-bias turn-on voltage of 1.68 V with an ideality factor of 2.5 and a breakdown voltage of 9 V are obtained from the current-voltage measurements. The emission peak wavelength and full width at half-maximum of electroluminescence are around 610 nm and 79 meV at 20 mA. The external quantum efficiency of the uncoated diode is about 0.015%.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1993
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 3
    Online Resource
    Online Resource
    AIP Publishing ; 1991
    In:  Journal of Applied Physics Vol. 70, No. 10 ( 1991-11-15), p. 6600-6602
    In: Journal of Applied Physics, AIP Publishing, Vol. 70, No. 10 ( 1991-11-15), p. 6600-6602
    Abstract: High-performance R2Fe14BNx-type magnets (R=Nd and/or Pr/Dy) were successfully prepared by sintering. The optimum magnetic properties are coercivity iHc: 680–1440 kA/m; Hc: 500–1000 kA/m; Br: 1.0–1.3 T; and (BH)m: 180–250 kJ/m3 depending on the composition and processing parameters, especially the proper sintering conditions, including nitrogen intake at 1040 to 1050 °C. The magnets thus obtained have Tc values of 335 to 370 °C depending on the nitrogen content, which should be & lt;6 at. % for thermal stability. The anisotropy field increases from 6.2 to 8 T with addition of nitrogen, and magnetization measured at 2 T increases by 18%. The weight loss after immersion in a 5% HCl solution for 30 min is 25% less for nitrogenated magnets than for those without nitrogen, due to the replacement of the Nd-rich phase at grain boundaries by more corrosion- resistant nitrides.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1991
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 4
    Online Resource
    Online Resource
    AIP Publishing ; 1990
    In:  Journal of Applied Physics Vol. 68, No. 5 ( 1990-09-01), p. 2140-2145
    In: Journal of Applied Physics, AIP Publishing, Vol. 68, No. 5 ( 1990-09-01), p. 2140-2145
    Abstract: The Al0.05Ga0.95As/Al0.35Ga0.65As single- and multiple-quantum-well structures with well widths less than 20 Å have been successfully fabricated by liquid-phase epitaxy using low-temperature, two-phase, and dummy wafer methods. The transmission electron microscope cross-section technique is applied to study the thickness variation of quantum well and the transition width at the heterojunction interface. An interesting phenomenon observed during liquid-phase epitaxy growth is that the interface of Al0.05Ga0.95As grown on Al0.35Ga0.65As is rather flat and sharp whereas the opposite growth sequence gives rise to a wavy interface. It is believed that the flat Al0.05Ga0.95As/Al0.35Ga0.65As interface is due to a tendency to deposit the epilayer when the Al0.05Ga0.95As solution is in contact with the Al0.35Ga0.65As substrate and the wavy Al0.35Ga0.65As/ Al0.05Ga0.95As interface is due to a tendency to dissolve the substrate when the Al0.35Ga0.65As solution is in contact with the Al0.05Ga0.95As substrate. The transition width is less than 10 Å at the Al0.05Ga0.95As/Al0.35Ga0.65As interface but is about 30–50 Å at the inverted Al0.35Ga0.65As/ Al0.06Ga0.95As interface. These values are about the same as those reported in the recent literature. The peak energy of the photoluminescence spectrum reveals the quantum size effect.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1990
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 5
    Online Resource
    Online Resource
    AIP Publishing ; 1991
    In:  Journal of Applied Physics Vol. 70, No. 10 ( 1991-11-15), p. 6376-6376
    In: Journal of Applied Physics, AIP Publishing, Vol. 70, No. 10 ( 1991-11-15), p. 6376-6376
    Abstract: In an alloy design to precipitate the hard Nd2Fe14B (2-14-1) in the NdFe11M (1-12 phase, M is one of Ti/V/Mo/Al) matrix, different ratios of the 2-14-1 composition were added into the 1-12 compositions and prepared by melt spinning. It resulted in high-coercivity Nd-Fe-B-M alloys (M is Ti/V/Mo/Al) with Nd and B composition less than the stoichiometric 2-14-1 compound, yet with promising intrinsic coercivity (iHc) of up to 12 kOe after suitable annealing. XRD analyses showed that for the alloys with higher iron lower in both Nd and B, the matrix is 1-12 and alpha-iron, while for the alloys with higher Nd and B, the 2-14-1 is competitive with other phases. The iHc vs temperature fitting of a Nd10Fe83.1B2.7Ti4.2 alloy (iHc=80 kA/m at 293 K) shows weak pinning, while that of a Nd10.8Fe82.9B4.4Ti1.9 alloy (iHc=900 kA/m at 293 K) shows strong pinning.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1991
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 6
    Online Resource
    Online Resource
    AIP Publishing ; 1994
    In:  Applied Physics Letters Vol. 65, No. 15 ( 1994-10-10), p. 1921-1923
    In: Applied Physics Letters, AIP Publishing, Vol. 65, No. 15 ( 1994-10-10), p. 1921-1923
    Abstract: Long range composition ordering and spontaneous formation of Al rich and Ga rich AlxGa1−xAs/AlyGa1−yAs superlattice were demonstrated. This was observed by cross-sectional transmission electron microscopy (TEM) in a 280 Å Al0.4GaAs quantum well laser diode heterostructure with Al0.7GaAs barriers grown on (111)B GaAs substrates. On the contrary, none of above superstructure was observed by TEM on a side-by-side grown (100) oriented substrate. More evidence is shown in the (111)B Al0.7GaAs barriers which were disordered due to a high growth temperature and did not show any superstructure. 10 K photoluminescence was shown with 32 meV redshift and a 12-times peak intensity enhancement in (111)B orientation.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1994
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 7
    Online Resource
    Online Resource
    AIP Publishing ; 1992
    In:  Journal of Applied Physics Vol. 72, No. 10 ( 1992-11-15), p. 4655-4659
    In: Journal of Applied Physics, AIP Publishing, Vol. 72, No. 10 ( 1992-11-15), p. 4655-4659
    Abstract: In order to fabricate high-brightness thin-film electroluminescent devices, the dependence of crystallinity on deposition conditions of the ZnS:Tb,F thin films deposited by rf-magnetron sputtering system have been studied. The optimal deposition conditions to get the best crystallinity are obtained as rf power density of 4.39 W/cm2, substrate temperature 150 °C, and post-anneal at 550 °C for 1 h. The (111) plane spacing and lattice constant are 3.1238 and 5.411 Å, respectively. The green electroluminescent devices with the structure of glass/indium-tin-oxide/SiO2/HfO2/ZnS:Tb,F/HfO2/SiO2/Al have the highest brightness and luminous efficiency hη of 830 cd/m2 and 0.8 lm/W, respectively, under 1 kHz sinusoidal wave voltage excitation and the Commission Internationale de l’Eclairage chromaticity is x=0.3096, y=0.5998, respectively.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1992
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 8
    Online Resource
    Online Resource
    AIP Publishing ; 1991
    In:  Journal of Applied Physics Vol. 69, No. 8 ( 1991-04-15), p. 5554-5556
    In: Journal of Applied Physics, AIP Publishing, Vol. 69, No. 8 ( 1991-04-15), p. 5554-5556
    Abstract: YFe10−xCoxMo2(0 ≤ x ≤ 10) compounds were synthesized and studied by x-ray and neutron diffraction. Single phase samples with ThMn12-type structure can be formed in the entire range of composition. Magnetic properties were studied at fields up to 70 kOe in the temperature range of 1.5 K to room temperature. X-ray diffraction analyses of aligned powders indicate that the easy magnetization direction is parallel to the c axis when x≤6, and deviates from the c axis when x≥8. Neutron diffraction experiments show that the molybdenum atoms exhibit a strong preference for occupying the 8i sites, and cobalt atoms prefer to occupy the 8f and 8j sites.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1991
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 9
    Online Resource
    Online Resource
    AIP Publishing ; 1994
    In:  Journal of Applied Physics Vol. 76, No. 10 ( 1994-11-15), p. 6834-6836
    In: Journal of Applied Physics, AIP Publishing, Vol. 76, No. 10 ( 1994-11-15), p. 6834-6836
    Abstract: Addition of tungsten (1–2 at. %) is very effective in improving coercivity of (Nd,Dy)-(Fe,Co)-B sintered magnets both at room temperature and elevated temperatures in addition to improving thermal stability. Transmission electron microscopy shows that there exists a WFeB precipitate phase inside the Nd2Fe14B (2-14-1) matrix grain. The WFeB phase is plateletlike, and occasionally appears to have its largest dimension running parallel to the c axis of the 2-14-1 matrix phase. The orientation relationship between the WFeB precipitate and the matrix is found to be (102)WFeB∥(220)2-14-1, and [010]WFeB∥[002] 2-14-1. Domain walls jump from a position alongside the WFeB particles to a new position alongside others upon turning on magnetic field of the objective lens, as evidenced by Lorentz microscopy, denoting the ability of domain-wall pinning by the strain field around the WFeB precipitate. As a result, this provides extra hindrance to domain-wall motion and leads to enhanced coercivity and thermal stability, particularly at elevated temperatures.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1994
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 10
    Online Resource
    Online Resource
    AIP Publishing ; 1994
    In:  Journal of Applied Physics Vol. 76, No. 10 ( 1994-11-15), p. 6766-6768
    In: Journal of Applied Physics, AIP Publishing, Vol. 76, No. 10 ( 1994-11-15), p. 6766-6768
    Abstract: Magnetic properties of (Nd0.9R0.1)5Fe17 have been investigated. Samples were prepared by arc melting and annealed at 600 °C for 48 days. X-ray diffraction and thermomagnetic analyses showed that the samples are almost single phase with the Nd5Fe17 structure when R=Sm, Gd, and Y, but this structure cannot be formed when R=Pr. The effects of R substitution on saturation magnetization, Curie temperature, and lattice parameters are reported. X-ray diffraction analyses of aligned powders suggests that these samples have basal plane anisotropy. The magnetization does not fully saturate along the field in a field up to 70 kOe although the magnetization curves show the characteristic behavior of a soft ferromagnetic material.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1994
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
    Location Call Number Limitation Availability
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