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  • 11
    Electronic Resource
    Electronic Resource
    Structure of hard-particle fluids near a hard wall. IV. yw(z,θ) for homonuclear hard diatomics (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 2232-2237 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Homonuclear hard diatomics in the vicinity of a hard wall have been studied using Monte Carlo simulations. During the simulations the cavity distribution functions for parallel and perpendicular orientations with respect to the wall and their Legendre expansion coefficients were calculated. It is demonstrated that the Legendre expansion is rapidly convergent and only several coefficients are required to describe the wall-diatomic correlation function within the simulation error. In addition, two simple methods for theoretical prediction of the cavity distribution function at small distances are compared with the simulation data. These approaches require as input quantities only thermodynamic data for the bulk homogeneous fluid. Both methods yield good accuracy for the cavity correlation function at the specific orientations indicated and for the first two Legendre coefficients, but fail to accurately describe higher Legendre coefficients.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.459893
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  • 12
    Electronic Resource
    Electronic Resource
    Interfacial microstructure and electrical properties of the Pt/Ti ohmic contact in p-In0.53Ga0.47As formed by rapid thermal processing (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3754-3760 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interfacial microstructure and electrical properties of the Pt/Ti ohmic contact to p-In0.53Ga0.47As (Zn: 5×1018 cm−3) formed by rapid thermal processing (RTP) were intensively studied. Significant interdiffusion of Ti, In, and As across the interface, driven by RTP, occurred at temperatures of, or above, 350 °C for a heating duration of 30 s. A minimum specific contact resistance (9.0×10−6 Ω cm2) was achieved after heating at 450 °C. Cross-sectional transmission electron microscopy of this sample revealed an interfacial reaction zone with complicated microstructure, and the dominant interfacial compound was identified to be InAs. Further increase in RTP temperature resulted in a change in the microstructure, and degradation of the contact resistance. The temperature-dependence characteristic of the specific contact resistance of as-deposited Pt/Ti contact to InGaAs revealed a thermionic-emission-dominated carrier-transport mechanism with an effective barrier height φb, of 0.13 V. RTP treatment to the sample at elevated temperatures up to 450 °C decreased the temperature dependence of the contact resistance. This phenomenon strongly suggests a partial conversion of the dominant carrier-transport mechanism across the contact area from thermionic emission to field emission. This was further verified by fitting the temperature dependence of the measured contact resistance to a phenomenological theory based on a linear combination of the two different types of carrier-transport mechanisms operating at isolated area segments distributed uniformly across the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345018
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  • 13
    Electronic Resource
    Electronic Resource
    Pt/Ti/n-InP nonalloyed ohmic contacts formed by rapid thermal processing (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3872-3875 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low resistance nonalloyed ohmic contacts of e-gun evaporated Pt/Ti to S doped n-InP 5×1017, 1×1018, and 5×1018 cm−3 have been fabricated by rapid thermal processing. The contacts to the lower doped substrates (5×1017 and 1×1018 cm−3) were rectifying as-deposited as well as after heat treatment at temperatures lower than 350 °C. Higher processing temperatures stimulated the Schottky to ohmic contact conversion with minimum specific contact resistance of 1.5×10−5 and 5×10−6 Ω cm2, respectively, as a result of rapid thermal processing at 450 °C for 30 s. Heating at a temperature of 550 °C again yielded a Schottky contact. The contact to the 5×1018 cm−3 InP was ohmic as deposited with a specific contact resistance value of 1.1×10−4 Ω cm2. Supplying heat treatment to the contact caused a decrease of the specific contact resistance to a minimum of 8×10−7 Ω cm2 as a result of rapid thermal processing at 450 °C for 30 s. In all cases, this heat treatment caused a limited interfacial reactions between the Ti and the InP, and resulted in an almost abrupt interface. Heating at temperatures higher than 500 °C resulted in an interfacial intermixing and a mutual migration and reaction of the Ti and the semiconductor elements. The Pt/Ti bilayer structure was highly tensile as deposited (5×109 dyn cm−2) and became stress-free as a result of the interfacial reactions which took place while heating the samples to temperature of 400 °C or higher.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344986
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  • 14
    Electronic Resource
    Electronic Resource
    Pt/Ti Ohmic contact to p++-InGaAsP (1.3 μm) formed by rapid thermal processing (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 884-889 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonalloyed Ohmic contacts of evaporated Pt/Ti to p-InGaAsP (λg=1.3 μm) with different Zn doping levels ranging 5×1018–2×1019 cm−3 have been fabricated by rapid thermal processing. These contacts showed Ohmic behavior prior to any heat treatment with a specific contact resistance of 4×10−3 Ω cm2 for the lowest doping level and 1×10−4 Ω cm2 for the highest level. A decrease in the specific resistance was achieved by supplying rapid thermal processing to the contacts, while the lowest values were observed on all the contacts as a result of heating at 450 °C for 30 sec. The lowest resistance of 1×10−6 Ω cm2 was achieved at the contact that was formed on the 2×1019 cm−3 Zn-doped InGaAsP layer. Measurements of the conduction activation energy yields a good linear dependence of the specific resistance on temperature in all the contacts as deposited and after the different heat treatments. The higher the doping level and the rapid thermal processing temperature up to 450 °C, the lower the activation energy, which may suggest an increase in the tunneling carrier transport mechanism contribution at the expense of the thermionic-emission one. The morphology and microstructure of these contacts were not influenced by the variations in the Zn doping concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345748
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  • 15
    Electronic Resource
    Electronic Resource
    Correlation of modulated optical reflectance with silicon carrier lifetime and impurity concentration (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1169-1171 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Modulated optical reflectance imaging using a scanning dual laser apparatus is a new, nondestructive tool for the characterization of semiconductor surfaces. One can expect that semiconductor material parameters such as doping concentration, impurity and damage level, which influence the minority-carrier lifetime and diffusion length, may also influence the magnitude of the modulated reflectance signal. A semi-quantitative correlation is presented for multilayer epitaxially grown structures with germanium and boron-induced dislocations, as well as on their Czochralski silicon substrates, which contain a denuded zone.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102552
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  • 16
    Electronic Resource
    Electronic Resource
    Colorimetric Determination of Trace Quantities of Boric Acid in Biological Materials (1955)
    s.l. : American Chemical Society
    Analytical chemistry 27 (1955), S. 295-297 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60098a036
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  • 17
    Electronic Resource
    Electronic Resource
    Vacuum Fusion Analysis by Iron Bath Technique (1955)
    s.l. : American Chemical Society
    Analytical chemistry 27 (1955), S. 1636-1637 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60106a042
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  • 18
    Electronic Resource
    Electronic Resource
    Volumetric and Gravimetric Analytical Methods for Organic Compounds (1956)
    s.l. : American Chemical Society
    Analytical chemistry 28 (1956), S. 706-714 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60112a020
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  • 19
    Electronic Resource
    Electronic Resource
    Multipurpose Standard for Microchemical Analysis (1958)
    s.l. : American Chemical Society
    Analytical chemistry 30 (1958), S. 149-150 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60133a042
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  • 20
    Electronic Resource
    Electronic Resource
    The Oxidation of Graphitized Carbon Black. (1956)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 60 (1956), S. 689-691 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150539a046
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