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  • 1
    Electronic Resource
    Electronic Resource
    Low-resistivity epitaxial YBa2Cu3O7 thin films with improved microstructure and reduced microwave losses (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5572-5578 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of YBa2Cu3O7 have been prepared on SrTiO3 and LaAlO3 substrates by a high-pressure planar dc-sputtering technique. By covering the substrate heater with a frame of polycrystalline YBa2Cu3O7 substantial improvements of the YBa2Cu3O7 film properties were achieved. These are characterized by dc-resistivity values ρ(T) of less than 50 μΩ cm at 100 K and ρ(300 K)/ρ(100 K) values of up to 3.9. Significant deviations from the usual linear ρ(T) behavior were found. Critical temperatures above 90 K, resistive transition widths down to 0.3 K, and critical current densities of about 5 × 106 A/cm2 at 77 K confirm the high quality of the films. As indicated by Rutherford backscattering and high-resolution transmission electron microscopy the films exhibit a microstructure characterized by a reduced density of lattice defects. However, lattice-coherent precipitates with a diameter of about 5–10 nm were observed. As an outstanding feature the films exhibit, besides the initial steep falloff at Tc, a further gradual decrease of the microwave surface resistance at 87 GHz below 50 K by at least one order of magnitude. These results are very promising for millimeter-wave applications of epitaxial YBa2Cu3O7 thin films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350535
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  • 2
    Electronic Resource
    Electronic Resource
    Elastic constants and hardness of ion-beam-sputtered TiNx films measured by Brillouin scattering and depth-sensing indentation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3053-3057 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: TiNx films of various composition have been prepared by reactive-ion-beam sputtering at a deposition temperature of 50 °C. Young's modulus E and hardness H of these films were measured by a depth-sensing nanoindentation technique, whereas the shear modulus G was obtained by a measurement of the velocity of the acoustic surface wave by Brillouin light scattering. The study was extended over a wide range of stoichiometries, 0≤x≤0.8. A proportionality between E and H has been observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348963
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  • 3
    Electronic Resource
    Electronic Resource
    The properties of a-C:H films deposited by bias sputtering of carbon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1558-1562 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon films were deposited by rf bias sputtering of a carbon target in argon. Bias voltage and argon pressure were varied systematically. Hardness, internal stress, density, hydrogen content, and infrared absorption were measured as functions of the preparation parameters. From the IR measurements the bond ratio of sp3 to sp2 was calculated and the total amount of hydrogen in the films was determined by elastic recoil detection. The hydrogen content was found to be much lower than for films prepared by plasma decomposition of hydrocarbons. Because the film thickness was in the range of 500 nm, the hardness was measured with an ultralow-load diamond indenter. For these measurements the indentation depth was about 60 nm. The internal stress was determined by the bending beam method. The coordination number, number density, and the filling factor were calculated from the measured values. The results have been compared to those for films deposited by plasma decomposition of hydrocarbons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346634
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  • 4
    Electronic Resource
    Electronic Resource
    He2Cl2 and He3Cl2 van der Waals clusters: A quantum Monte Carlo study (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 6472-6480 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The results of the first variational and Green's function Monte Carlo calculations of the vibrational ground states of He2Cl2 and He3Cl2 van der Waals (vdW) clusters are presented in this paper. The quantum dynamics of all internal degrees of freedom are treated exactly. The ground state wave function of He2Cl2 is characterized by means of the probability distribution functions of the intermolecular degrees of freedom, which reveal an exceptionally fluxional vdW complex. A simple model for the ground state of HenCl2 vdW clusters was developed. The zero-point energies of He2Cl2 and He3Cl2 predicted by this model are in remarkable agreement (to within 0.6%) with the accurate results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.463708
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  • 5
    Electronic Resource
    Electronic Resource
    Correlated Monte Carlo wave functions for the atoms He through Ne (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 4172-4178 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We apply the variational Monte Carlo method to the atoms He through Ne. Our trial wave function is of the form introduced by Boys and Handy. We use the Monte Carlo method to calculate the first and second derivatives of an unreweighted variance and apply Newton's method to minimize this variance. We motivate the form of the correlation function using the local current conservation arguments of Feynman and Cohen. Using a self-consistent field wave function multiplied by a Boys and Handy correlation function, we recover a large fraction of the correlation energy of these atoms. We give the value of all variational parameters necessary to reproduce our wave functions. The method can be extended easily to other atoms and to molecules.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458750
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  • 6
    Electronic Resource
    Electronic Resource
    Correlated Monte Carlo wave functions for some cations and anions of the first row atoms (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 3382-3385 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We applied the variational Monte Carlo method to the computation of the correlation energy for several first row cations (Li+ through Ne+) and anions (B− through F−). In addition, we obtained estimates of their ionization potentials and electron affinities. The ionization potentials differ from the experimental results on the average by 0.11 eV and the electron affinites differ on the average by 0.07 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.463938
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  • 7
    Electronic Resource
    Electronic Resource
    Optical and structural investigation of SiGe/Si quantum wells (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2183-2185 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we report photoluminescence and structural results obtained on asymmetrically strained Si0.7Ge0.3/Si single and multiple quantum wells epitaxially grown by low pressure chemical vapor deposition. Well-resolved peaks were obtained which can be attributed to quantum well excitons and their transversal optical phonon replica. A good correlation between peak properties and structure results was found. From the photoluminescence peak energies a valence band offset of 0.27 eV and an effective hole mass of 0.25 were estimated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107073
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  • 8
    Electronic Resource
    Electronic Resource
    Temperature dependence of solvated electron diffusion in water and water-d2 (1992)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 96 (1992), S. 199-206 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100180a039
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  • 9
    Electronic Resource
    Electronic Resource
    Mechanical properties of a-Si:H films studied by Brillouin scattering and nanoindenter (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6772-6778 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of a-Si:H films has been prepared by rf sputtering in a H2-Ar gas mixture. To obtain films with different hydrogen content the hydrogen portion of the gas mixture was changed from 0% to 20%. The shear modulus μ was then measured by the frequency of the surface phonon (Rayleigh wave). The stiffness S and the ultramicrohardness H were measured by using a nanoindenter. From the shear modulus μ and the stiffness S, the Young's modulus E and Poisson's ratio ν were calculated. The intrinsic mechanical stress was measured by the bending-beam method. With increasing hydrogen content of the films, the decrease of Young's modulus, microhardness, and internal stress are observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345064
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  • 10
    Electronic Resource
    Electronic Resource
    The properties of a-C:H films deposited by plasma decomposition of C2H2 (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 487-494 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamondlike a-C:H films have been deposited by plasma decomposition of C2 H2. 50 samples were prepared with a systematic variation of the deposition parameters: the substrate bias voltage was between −100 and −1400 V and the C2 H2 gas pressure was between 4×10−4 and 2.6×10−1 mbar. The following properties of the films were measured: the density by Rutherford backscattering, the total concentration of hydrogen by elastic recoil detection, the bonding ratio sp3 /sp2 by infrared spectroscopy, the internal stress by the bending beam method, and the hardness with a Knoop microhardness tester. It has been shown that the hardness and other mechanical properties cannot be correlated to the average carbon coordination number mc. This is because mc is calculated under the assumption of a homogenous single-phase model, which does not seem to be justified. It is demonstrated that the mechanical properties can be explained by the application of a void model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345230
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