Online Resource
San Diego :Elsevier Science & Technology,
Keywords:
Semiconductors.
;
Electronic books.
Type of Medium:
Online Resource
Pages:
1 online resource (711 pages)
Edition:
1st ed.
ISBN:
9780080864396
Series Statement:
Issn Series
URL:
https://ebookcentral.proquest.com/lib/geomar/detail.action?docID=349680
Language:
English
Note:
Front Cover -- Oxygen in Silicon: Semiconductors and Semimetals -- Copyright Page -- Contents -- List of Contributors -- Preface -- Chapter 1. Introduction to Oxygen in Silicon -- Chapter 2. The Incorporation of Oxygen into Silicon Crystals -- I . Introduction -- II. Silicon Crystal Growth -- III. Characteristics of Czochralski Silicon Growth -- IV. Oxygen Incorporation and Segregation in Czochralski Silicon Growth -- V. Controlled Oxygen Silicon Growth -- VI. Summary -- References -- Chapter 3. Characterization Techniques for Oxygen in Silicon -- I. Introduction -- II. Physical Techniques -- Ill. Chemical Techniques -- IV. Electrical Techniques -- V. Summary -- References -- Chapter 4. Oxygen Concentration Measurement -- I. Introduction -- II. Infrared Absorption Measurements Under Ideal Conditions -- III. Infrared Spectrometers -- IV. Analysis of Oxygen Spectra -- V. Absolute Determinations and Calibration Factors -- VI. Standards and Reference Materials -- VII. Summary -- Acknowledgments -- References -- Chapter 5. Intrinsic Point Defects in Silicon -- I. Introduction -- II. Swirl Defect Manifestation of Intrinsic Point Defects -- III. Thermal Defects in Silicon -- IV. Self-Diffusion -- V. Coexistence of Vacancies and Self-Interstitials in Silicon -- VI. Interstitial Configuration and Charge-Enhanced Migration -- VII. Formation and Migration Parameters of Point Defects -- VIII. Defect Energetics and Pathways from Theoretical Calculations -- IX. Summary -- References -- Chapter 6. Some Atomic Configurations of Oxygen -- I. Introduction -- II. Spectroscopy of Localized Modes in Semiconductors -- III. Interstitial Oxygen -- IV. Quasi-Substitutional Oxygen -- V. Comparison with Other Light Element Impurities -- VI. Oxygen in Other Semiconductors -- VII. Summary -- Acknowledgments -- References.
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Chapter 7. Electrical Properties of Oxygen in Silicon -- I. Introduction -- II. Thermal Donors -- III. New Donors -- References -- Chapter 8. Diffusion of Oxygen in Silicon -- I. Introduction -- II. Direct Measurements of Normal Oxygen Diffusion -- III. Indirect Measurements of Normal Oxygen Diffusion -- IV. Enhanced Oxygen Diffusion Not Involving Hydrogen -- V. Silicon Containing Hydrogen Impurities -- VI. Theoretical Modeling of Oxygen Diffusion -- VII. Constraints on Models of Thermal Donor Centers -- VIII. Summary -- Acknowledgments -- References -- Chapter 9. Mechanisms of Oxygen Precipitation: Some Quantitative Aspects -- I. Introduction -- II. Volume Shortage Associated with Oxygen Precipitation -- III. Precipitate Nucleation -- IV. Precipitate Growth -- V. The Effect of Carbon -- VI. Defect Generation -- VII. Summary: The Free Energy and Flux Balance Treatment of the Oxygen Precipitation Problem -- References -- Chapter 10. Simulation of Oxygen Precipitation -- I. Introduction -- II. Model Types -- III. Models and Experimental Results -- V. On the Interactions of Oxygen with Other Defects -- VI. Summary -- References -- Chapter 11. Oxygen Effect on Mechanical Properties -- I. Introduction -- II. Plastic Deformation and Dislocations in Silicon Crystals -- III. Influence of Dispersed Oxygen Atoms on the Mobility of Dislocations in Silicon -- IV. Immobilization of Dislocations by Oxygen -- V. Effect of Oxygen on Dislocation Generation -- VI. Mechanical Properties of Silicon as Influenced by Oxygen Impurities -- VII. Influence of Oxygen Precipitation on Mechanical Strength -- VIII. Effects of Nitrogen and Carbon Impurities on Mechanical Properties of Silicon -- IX. Summary -- References -- Chapter 12. Grown-in and Process-Induced Effects -- I. Introduction -- II. Oxygen Precipitation During High-Temperature Processes.
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III. Grown-in Defects: Precipitation and Intrinsic Defect Aggregation During Crystal Growth -- IV. Summary -- References -- Chapter 13. Intrinsic/Internal Gettering -- I. lntroduction -- II. Surface and Interior Microdefects -- III. Gettering -- IV. Oxygen Behavior in Silicon -- V. Internal Gettering Process and Mechanism -- VI. Summary -- References -- Chapter 14. Oxygen Effect on Electronic Device Performance -- I. Introduction -- II . Device Characteristics and Crystal Defects -- III. Defect Generation -- IV. Improvement of Device Yield -- V. Summary -- Acknowledgments -- References -- Index -- Contents of Volumes in this Series.
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