GLORIA

GEOMAR Library Ocean Research Information Access

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1995-1999  (2)
Document type
Publisher
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Compensation of n-type GaN (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3028-3030 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Compensation in Se-doped n-type GaN prepared by atmospheric pressure metalorganic vapor phase epitaxy was studied. Hydrogen selenide was the dopant source. The carrier concentration is linearly proportional to the H2Se pressure for low partial pressures and proportional to the cube root at high partial pressures. Carrier concentrations as high as 6×1019 cm−3 at 295 K were achieved. From Hall-effect measurements, the Se-doped GaN was shown to be highly compensated even for heavily n-type material. The defects responsible for the compensation were investigated using low-temperature photoluminescence. A strong acceptor-related transition at 3.447 eV at 15 K was observed in the heavily doped layer. The observed doping dependence of Se in GaN is attributed to compensation by triply charged vacancies which is consistent with recent theoretical calculations on defect formation in n-type material. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116828
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Deep level defects in n-type GaN compensated with Mg (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3769-3771 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level defects in n-type epitaxial GaN compensated with Mg were measured using photocapacitance spectroscopy on Schottky barrier diodes. The doped GaN was prepared by atmospheric pressure metalorganic vapor phase epitaxy using bis(cyclopentadienyl)magnesium as the dopant source. The Mg-doped GaN films were n type as determined by Hall-effect measurements. Addition of magnesium resulted in the formation of a series of deep centers with optical threshold energies of 1.0, 1.2, 1.8, and 3.1 eV. Upon annealing the Mg compensated GaN in nitrogen at 850 °C the midgap levels disappeared and only the trapping level at 3.1 eV remained. The midgap levels are ascribed to Mg dopant complexes which may be responsible for low doping efficiency of Mg in the as-grown, doped GaN as well as its semi-insulating behavior. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116001
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...