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  • 1995-1999  (8)
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  • 1
    Electronic Resource
    Electronic Resource
    0.4 μm spatial resolution with 1 GHz (λ=30 cm) evanescent microwave probe (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 1725-1729 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In this article we describe evanescent field imaging of material nonuniformities with a record resolution of 0.4 μm at 1 GHz (λg/750 000), using a resonant stripline scanning microwave probe. A chemically etched tip is used as a point-like evanescent field emitter and a probe–sample distance modulation is employed to improve the signal-to-noise ratio. Images obtained by evanescent microwave probe, by optical microscope, and by scanning tunneling microscope are presented for comparison. Probe was calibrated to perform quantitative conductivity measurements. The principal factors affecting the ultimate resolution of evanescent microwave probe are also discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149658
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  • 2
    Electronic Resource
    Electronic Resource
    Highly oriented layers of the three-dimensional semiconductor CdTe on the two-dimensional layered semiconductors MoTe2 and WSe2 (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5718-5722 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The II–VI semiconductor CdTe was sequentially deposited onto the (0001) van der Waals surfaces of the layered compound semiconductors MoTe2 and WSe2 by molecular beam epitaxy. Growth could only be achieved after deposition of a nucleation layer of CdTe at room temperature. After nucleation subsequent deposition steps followed at increased substrate temperatures (T=170–370 °C) in order to increase the crystalline quality of the films. The deposited films were investigated after each growth step by low energy electron diffraction and photoelectron spectroscopy. The diffraction pattern indicates a facetting of the (111) oriented film surfaces. From photoemission data we exclude interface reactions between substrate and film material. Transmission electron microscopy was used to examine the film morphology after the UHV experiments. The mean diameter of the film crystallites is 200–400 A(ring). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363624
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  • 3
    Electronic Resource
    Electronic Resource
    Heteroepitaxy of CuInS2 on Si(111) (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3010-3012 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers of CuInS2 are grown on chemically hydrogen terminated Si(111) surfaces with 4° miscut by molecular beam epitaxy. The morphological and structural properties are determined by scanning electron microscopy, transmission electron microscopy, x-ray diffraction, and texture analysis. The data show growth in the 〈112〉 direction and substantial twinning of the 75-nm-thick films. High-resolution cross-sectional micrographs of the interface indicate semicoherent epitaxial growth via an interfacial indium-rich secondary phase. The pronounced faceting of the film surface is discussed in relation to twin lamellae. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116822
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  • 4
    Electronic Resource
    Electronic Resource
    CuAu-type ordering in epitaxial CuInS2 films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 785-787 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ordering of Cu and In atoms in near-stoichiometric CuInS2 epitaxial films grown on Si (111) by molecular beam epitaxy was studied by transmission electron microscopy. Nonchalcopyrite ordering of the metal atoms in CuInS2 is observed, which is identified as CuAu-type ordering. Sharp spots in electron diffraction patterns reveal the ordered Cu and In atom planes alternating along the [001] direction over a long range. High-resolution electron microscopy confirms this ordering. The CuAu-ordered structure coexists with the chalcopyrite ordered structure, in agreement with theoretical prediction. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122001
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  • 5
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy investigation and first-principles calculation of the phase stability in epitaxial CuInS2 and CuGaSe2 films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2483-2485 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ordering of metal atoms in CuInS2 and CuGaSe2 thin films grown by vapor-phase epitaxy on Si (001) and GaAs (001) substrates were studied using transmission electron microscopy and first-principles total energy calculations. Chalcopyrite and CuAu-like orderings of the metal atoms were observed coexisting in CuInS2 films, while only chalcopyrite ordering was found in CuGaSe2 films. First-principles total energy calculations find that the formation enthalpy difference between chalcopyrite and CuAu-like phases of CuInS2 is very small (2 meV/atom), while it is large for CuGaSe2 (9 meV/atom), indicating that the existence of CuAu-like phase in the nominally chalcopyrite semiconductors is controlled by bulk thermodynamics. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123014
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  • 6
    Electronic Resource
    Electronic Resource
    Structure and voltage dependence of ferroelectric properties of SrBi2Ta2O9 thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 1746-1749 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline SrBi2Ta2O9 (SBT) ferroelectric thin films were synthesized on Pt/Ti/SiO2/Si substrates by the metalorganic decomposition technique. The SBT crystalline phase appeared at 550 °C, completely crystallized at 650 °C, and little pyrochlore phase was observed in the x-ray diffraction patterns. The grains, which are rodlike, increased from about 50 to 200 nm in diameter with increasing annealing temperature from 550 to 800 °C. Typically, the SBT thin film annealed at 750 °C had Pr=8.8 μC/cm2 and Ec=29.3 kV/cm at applied voltage of 5 V, and the hysteresis loops become saturated with an increase of the maximum applied voltage. The fatigue and retention characteristics of SBT thin films dependence on applied voltage and frequency have also been investigated. It revealed that the fatigue endurance at a higher frequency and a higher applied voltage could be better than that at a lower frequency and a lower applied voltage. The retention properties of the SBT thin films are quite good over a range of 1–10 000 S, and the influence of applied voltage and bias voltage is not obvious. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369341
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  • 7
    Electronic Resource
    Electronic Resource
    Bone Density and Tissue Lead Accretion in Growing Rats Fed Low High Calcium With or Without Supplemental Clinoptilolite (1996)
    Springer
    Bulletin of environmental contamination and toxicology 57 (1996), S. 713 -721 
    Details
    ISSN: 1432-0800
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s001289900248
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  • 8
    Electronic Resource
    Electronic Resource
    The Accumulation of Boron in Agropyron elongatum Grown in Coal Fly Ash and Sewage Sludge Mixture (1998)
    Springer
    Water, air & soil pollution 106 (1998), S. 137-147 
    Details
    ISSN: 1573-2932
    Keywords: Agropyron ; artificial soil-mix ; borontoxicity ; coal fly ash ; sewage sludge
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Notes: Abstract A greenhouse pot experiment was conducted to investigate the boron (B) release capacity of coal fly ash and sewage sludge mixtures, and the accumulation of B in Agropyron elongatum after two consecutive growing seasons. Sludge was amended with fly ash at application rates of 0, 5, 10, 35, and 50% (w/w), and each mixture was then mixed with a loamy soil at either 1:1 or 1:5 (v/v). Both water soluble B (WS-B) and hot water soluble B (HWS-B) increased with increasing fly ash amendment rate. Shoot B concentrations also increased significantly according to the rate of ash amendment. The ash-sludge mixture improved plant growth with the highest total dry weight yield at 10% ash amendment rate. Boron toxicity symptoms in leaf tips were observed at 35% and 50% ash amendment rate at both soil mixing ratios. Hot water soluble B and WS-B decreased significantly after consecutive cropping of Agropyron especially at low ratio of mixure with soil i.e., 1:5 (v/v). However, soil available B contents at ≥ 35% ash application rate and 1:1 (v/v) soil mixing ratio were still excessive for normal plant growth, suggesting that deleterious effects on plant growth would be experienced in later seasons owing to the high amounts of residual B.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004921301515
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