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  • 1
    Electronic Resource
    Electronic Resource
    Dynamics of a multiple-pulse-driven x-ray laser plasma (1996)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 606-613 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper we describe experimental and computational studies of multiple-pulse-driven laser plasma, which is the gain medium for a neon-like yttrium x-ray laser. Near-field emission profiles have been measured both with and without reinjection of the x-ray laser photons to couple with the amplifying medium created by later pulses using an external multilayer mirror. From the temporal and spatial evolution of the near-field emission profiles we can examine the pulse-to-pulse variation of the x-ray laser plasma due to changes in the hydrodynamics, laser deposition, and the injecting of x-ray laser photons back into an amplifying x-ray laser plasma. Using a combination of radiation hydrodynamics, atomic kinetics, and ray propagation codes, reasonable agreement has been obtained between simulations and the experimental results. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871888
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  • 2
    Electronic Resource
    Electronic Resource
    Time-resolved x-ray imaging of high-power laser-irradiated underdense silica aerogels and agar foams (1995)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 2 (1995), S. 3820-3831 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article presents the results of experiments in which a high-power laser was used to irradiate low density (4–9 mg/cm3) silica aerogel and agar foam targets. The laser–solid interaction and energy transport through the material were monitored with time-resolved imaging diagnostics, and the data show the production and propagation of an x-ray emission front in the plasma. The emission-front trajectory data are found to be in significant disagreement with detailed simulations, which predict a much more rapid heating of the cold material, and the data suggest that this discrepancy is not explainable by target inhomogeneities. Evidence suggests that energy transport into the cold material may be dominated by thermal conduction; however, no completely satisfactory explanation for the discrepancies is identified, and further experimental and theoretical research is necessary in order to resolve this important problem in laser–plasma interaction physics. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871081
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  • 3
    Electronic Resource
    Electronic Resource
    Soft x-ray interferometry : The 9th National conference on synchrotron radiation instrumentation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3364-3364 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The development of soft x-ray mirrors and large aperture soft x-ray beamsplitters now allows the near routine operation of soft x-ray interferometers with high brightness x-ray sources. Mach-Zehnder and Fourier transform interferometers utilizing a soft x-ray laser light source operating at 80 eV will be described. Results from high density, long scale-length plasma probing measurements, x-ray laser coherence measurements, and materials properties measurements will be presented. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147352
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  • 4
    Electronic Resource
    Electronic Resource
    Electrochemical cell for the preparation of porous silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3627-3630 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The design of a practical electrochemical cell to fabricate porous silicon layers (PSLs) is described. This cell is useful to rapidly produce PSLs without the need to prepare new electrochemical solutions. The cell is also adapted for the formation of PSLs in the dark or under illumination, with nitrogen flow in the solution. The special design of the silicon wafer support guarantees a homogeneous electrical contact and no solution infiltration into it. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147126
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  • 5
    Electronic Resource
    Electronic Resource
    X-ray lasers for high density plasma diagnostics (invited) : Proceedings of the tenth topical conference on high temperature plasma diagnostics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 574-578 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Collisionally pumped soft x-ray lasers now operate over a wavelength range extending from 35 to 300 A(ring). These well-characterized sources have high peak brightness (GeV blackbody temperature) and narrow bandwidth making them ideal for x-ray imaging and interferometry. We will describe experiments which have used the yttrium neon-like x-ray laser operating at 155 A(ring) to probe plasmas at electron densities exceeding 4×1021 cm−3. The short pulse duration of this x-ray laser (∼150 ps) has made it possible to image directly driven thin foils with 1–2 μm spatial resolution. Advances in multilayer mirrors and beam splitters have now also made it possible to develop x-ray laser interferometers. We will describe initial experiments to probe plasmas relevant to ICF using x-ray laser interferometry. The progress in the development of short pulse x-ray lasers (∼30 ps) which are ultimately necessary to extend x-ray laser diagnostic techniques to higher densities will also be presented. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146289
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  • 6
    Electronic Resource
    Electronic Resource
    Analysis of geometrical effects on the behavior of transverse and longitudinal modes of amorphous silicon compounds (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1933-1942 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The peak frequency, width, and shape of the transverse-optical (TO) and longitudinal-optical (LO) infrared absorption modes of silicon oxides (SiO2, SiOx), silicon nitrides (Si3N4, SiNx), silicon oxynitrides (SiOxNy), and other silicon compounds have often been connected with stress, stoichiometry, defects, structural order, and other properties of the layers. However, certain geometrical effects strongly influence the spectral response of the material independent of its physical or structural properties. The influence of layer thickness, multilayer configuration, substrate effects, angles, and polarization on the behavior of TO and LO bands are presented and discussed. Some corrections are suggested to reduce experimental error and for the reliable measurement of stress, composition, disorder, and structure. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364049
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  • 7
    Electronic Resource
    Electronic Resource
    Properties of porous silicon layers studied by voltammetric oxidation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3224-3228 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The existence of an outer cracked layer and an inner more structured porous layer has been observed in electrochemically obtained porous silicon when drying procedures are carried out. The changes in the charge transferred to the porous structure during voltammetric oxidation, the interference fringes obtained by Fourier-transform infrared spectroscopic measurements, and scanning electron microscopy micrographs confirm the existence of this double layer. Also, drying procedures and voltammetric oxidations drastically affect the intensity and wavelength of the peak maximum in the photoluminescence spectrum. The evolution of the luminescent properties is explained by the introduction of nonradiative recombination centers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361268
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  • 8
    Electronic Resource
    Electronic Resource
    Reconstruction of the SiO2 structure damaged by low-energy Ar-implanted ions (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 126-134 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The damage created in SiO2 layers by low-energy Ar ions (130 keV) and the reconstruction of the structure after various annealing steps have been characterized as a function of the implantation dose. Quantitative determinations of the damage produced have been performed from infrared spectroscopy. We show that two dose thresholds for damage are encountered: At 1014 cm−2 damage saturates and for doses above 1017 cm−2 sputtering effects dominate. Annealing at high temperatures (1100 °C) restores the structure of the initial nonimplanted oxide only for doses below the second threshold, although some disorder remains. Electroluminescence measurements show that annealing is able to eliminate electrically active defects. For implantation doses greater than 1017 cm−2, annealing is unable to restore the structure completely as sputtering effects create a depleted oxygen layer at the surface and substoichiometric defects appear. The presence of microcavities created by the Ar atoms at such high doses may affect the annealing behavior. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363998
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  • 9
    Electronic Resource
    Electronic Resource
    Depth-resolved micro-Raman study of porous silicon at different oxidation states (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2166-2168 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) and Raman spectra were measured along a cross section of porous silicon films at different oxidation times after application of anodic current transients. The average crystallite size was determined from the Raman spectra with the standard phonon confinement model. Before oxidation, the PL emission energy and crystallite size were found to be independent of the layer depth. Also, the integrated PL emission was larger for the middle layers. The effect of oxidation was a blueshift of the PL band and a decrease in the integrated emission for the outer layers. The crystallite size increases for all layers, particularly the outer ones. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119370
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  • 10
    Electronic Resource
    Electronic Resource
    Immunoglobulin E levels in relationship to HIV-1 disease, route of infection, and vitamin E status (1995)
    Oxford, UK : Blackwell Publishing Ltd
    Allergy 50 (1995), S. 0 
    Details
    ISSN: 1398-9995
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Our recent studies have demonstrated that in early HIV-1 infection, elevation of plasma immunoglobulin E (IgE) levels precedes the decline of CD4 cell count and is influenced by vitamin E status. In order to further investigate the role of IgE elevation in HIV-1 infection, we determined IgE levels in HIV-1-seropositive and -seronegative intravenous drug users (IDUs) (n = 38), in relationship to cellular and humoral immune function, liver enzymes, and vitamin E status. To examine the possible impact of the route of HIV-1 infection on IgE levels, comparisons between the cohorts of the HIV-1-seropositive and -seronegative IDUs and homosexual men (n = 45) were also conducted. All HIV-1-seropositive participants had significantly higher (P = 0.003) IgE levels than the HIV-1-seronegative subjects. The HIV-1-seropositive IDUs, moreover, demonstrated significantly higher (P = 0.01) IgE levels than HIV-1-seropositive homosexual men, despite similar CD4 cell counts. Stepwise regression analysis was used to evaluate the possible variables contributing to the IgE variation. HIV-1 status (P = 0.0009), intravenous drug use (P = 0.014), CD8 cell counts (P = 0.0001), plasma level of vitamin E (P = 0.006), and alcohol intake (P = 0.047) were significant, accounting for 71% of the IgE elevation. These findings suggest that IgE may serve as a sensitive marker to reflect the evolution of HIV-1 disease in individuals from different risk groups.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1398-9995.1995.tb05073.x
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